DTS2002 Search Results

Contextual Info: DTS2002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k

BUZ901P

Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
Contextual Info: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0

2n4888

Abstract: 2N4889 MM1712 transistor 2N6522 2N3633 2N4996 2N4419 2N6006 2N6521 2N3502
Contextual Info: CM m in m i CM CM CM I CM • I 0 10 0 O O 1 T~ T—1— o o o o o T -r1 I 0 000 I 1- m m m I I O O O 1 1 in in lo O O O O O o o o o o CO CO CO CO CO o o o o o o o o o o CO CO CO CO CO o o o o o o o o o o CO CO co co CO o o o o o TT CM CM CM co <0 CM CM CO 0

2N4889

Abstract: MM1712 2N4888 2N4419 mm1614 MM1712 transistor 2N4996 2N3633 2N6522 N6007
Contextual Info: TO-72 TO-72 TO-92 TO-98 TO-98 OOOOO OOOOO OOOOO CMCMg ? in m 0 0 in cmco tn in in in m in i co co COCO I r r r r I I COCO I 50 s o o o o o in in in in ^ o OOOO in 1 in m —in 1—T —o T— OO IOO o O I *- TT“ r* "ST s a m in in in rCMCMCMCMCM OOOOo ^ CMCMCM

ST10011

Abstract: 800-3D ST10023 STI-5740 DTS4061 4025 to-3 dts1010 ST10007 DTS1020 STI5740
Contextual Info: SE MICONDU CTOR TECHNOL OG Y GSE D | fll3b4Sfl □□□□23b □ T- 33T- 33-3/ NPN & PNP’ SILICON DARLINGTON TRANSISTORS STI Type Industry Type-. Power Dissipation @ 2 5 0C watts Vc b O (volts) VCER (volts) VCE(SAT.) Vbe (SAT.)@Ic hpE@ lc •CEV (volts)