ECG23 Search Results

ECG229

Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
Contextual Info: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

PHILIPS dual gate mosfets

Abstract: ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion
Contextual Info: PHILIPS E C G INC SME J> M bbSa^fi DD071b7 bGO « E C G Power MOSFETS ECG Type Description and Application ECG2392 M O S FET , N-Ch, ▲ Enhancement H i Speed S w itch Drain to Gate to Continuous Transcon­ Source Drain Source Breakdown Breakdown Current ductance

Contextual Info: ECG2358 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

ECG2383

Contextual Info: ECG2383 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: ECG2357 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

451 MOSFET

Abstract: ECG463 transconductance mosfet ECG2388 ECG2384 Depletion MOSFET ecg 2385 power mosfet 500 A mosfet to3 mosfet 452
Contextual Info: Power MOSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Switch Drain to Gate to Continuous Gate to Transcon­ Source Source Drain Source Cutoff ductance Breakdown Breakdown Current Voltage Voltage Voltage gfs •d

ECG245

Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

ecg mosfet

Abstract: power mosfet - 169 A
Contextual Info: Power MOSFETS cont'd ECG Type ECG2387 ECG2399 A ECG2940 A ECG2941 A ECG2942 ECG2943 A ECG2944 A ECG2945 ECG2946 A ECG2947 A ECG2393 ECG2394 ECG2378 ECG2377 A Description and Application Transcon­ ductance gis limhos MOSFET, N-Ch Enhancement Hi Speed Switch

Contextual Info: ECG2387 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: ECG2342 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80ã V(BR)CBO (V) I(C) Max. (A)1 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k h(FE) Max. Current gain.

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

ECG2389 MOSFET

Abstract: ECG2373 ECG2389 ECG2383 ECG2371 ECG2382 ECG2384 ECG2372 ECG2386 ECG2392
Contextual Info: Power MOSFETS ECG Type E C G 2392 E C G 238 6 ▲ E C G 238 4 E C G 290 0 E C G 238 9 EC G 239S E C G 238 2 A Compì to ECG2383 E C G 238 3 (Compì to ECG2382) EC G 66 E C G 2371 E C G 239 6 E C G 237 2 A E C G 237 3 A Description and Application Transcon­

ECG2374

Abstract: ECG2398 MOSFET-N ECG2385 ECG2380 ECG2381 ECG2388 ECG2391 ECG2397 ECG2900
Contextual Info: Power MOSFETS cont'd ECG Type ECG2388 ▲ ECG2374 ▲ ECG2900 ▲ ECG67 ▲ ECG2391 ▲ Description and Application Drain to Transcon­ Source ductance Breakdown Voltage gfs pmhos b vDSS MOSFET, N-Ch, Enhancement Hi Speed Switch 5 Min MOSFET, N-Ch, Enhancement

ECG2398

Abstract: ECG2374 ECG2385 ECG67 ECG2379 ECG2386 ECG2380 ECG2381 ECG2388 ECG2391
Contextual Info: Pow er M O SFETS cont'd ECG Type ECG2388 ▲ EC G 2374 ▲ ECG2900 ▲ ECG 67 ▲ ECG 2391 A Description and Application Transcon­ ductance gfs (imhos M O SFET, N-Ch, Enhancem ent Hi Speed S w itch 5 Min M O S FET, N-Ch, Enh an cem ent Hi Speed S w itch

ecg mosfet

Abstract: ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380
Contextual Info: PHILIPS E C G INC SME D • bbS3^5fl 00071b7 bOO ■ ECÛ Pow er M OSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Sw itch Gate to Continuous Drain to Source Drain Transcon­ Source ductance Breakdown Breakdown Current

J 115 mosfet

Abstract: ECG2376 5V GATE TO SOURCE VOLTAGE MOSFET ecg mosfet ECG2986 ECG2984 ECG2981
Contextual Info: Power M O SFETS cont'd EC6 Type ECG2920 ▲ ECG2375 A ECG2376 ▲ ECG2921 ▲ ECG2922 ▲ ECG2923 ▲ ECG2924 ▲ Description and Application Transcon­ ductance gfs gmhos M O S FET, 25 M in N-Ch, Enh ancem ent Hi Speed S w itch Drain to Sou ice Breakdown

jrc386d

Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Contextual Info: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42

ECG2388

Contextual Info: ECG2388 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: ECG2334 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.4k h(FE) Max. Current gain.

Contextual Info: ECG2335 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.

Contextual Info: ECG2344 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1k h(FE) Max. Current gain.

Contextual Info: ECG232 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50GÂ h(FE) Max. Current gain.

DIODE T28

Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp