EDI784MSV50SI Search Results
EDI784MSV50SI Datasheets Context Search
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Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlĂN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high |
OCR Scan |
EDI784MSV-RP 250ms minV50SI | |
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Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high |
OCR Scan |
EDI784MSV-RP EDI784MSV 528-byte I784M | |
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Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high |
OCR Scan |
EDI784MSV-RP EDI784MSV50SI EDI784MSV-RP ECOU8274 |