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    diode N1004

    Abstract: CPH5812 MCH3317 N1004 SBS010M TA-3787 74674
    Text: CPH5812 Ordering number : ENN7467A CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.


    Original     		PDF CPH5812 ENN7467A MCH3317) SBS010M) diode N1004 CPH5812 MCH3317 N1004 SBS010M TA-3787 74674

    74674

    Abstract: CPH5812 MCH3317 SBS010M TA-3787
    Text: Ordering number : ENN7467 CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5812 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5812] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET


    Original     		PDF ENN7467 CPH5812 CPH5812] MCH3317) SBS010M) 74674 CPH5812 MCH3317 SBS010M TA-3787