ESD11N Search Results
ESD11N Price and Stock
onsemi ESD11N5.0ST5GTVS DIODE 5VWM 12VC 2DSN |
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ESD11N5.0ST5G | Reel |
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ESD11N5.0ST5G | 460,959 | 4,066 |
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ESD11N5.0ST5G | Cut Strips | 152 | 99 Weeks | 1 |
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ESD11N5.0ST5G | 1,232,626 | 1 |
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ESD11N5.0ST5G | 656,631 |
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onsemi SSESD11N5.0ST5GTVS DIODE 5VWM 12VC 2DSN |
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SSESD11N5.0ST5G | Reel |
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SSESD11N5.0ST5G | Reel | 0 Weeks, 2 Days | 20,834 |
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SSESD11N5.0ST5G | 40,000 |
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SSESD11N5.0ST5G | 39,853 |
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FLIP ELECTRONICS SSESD11N5.0ST5GTVS DIODE 5VWM 12VC 2DSN |
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SSESD11N5.0ST5G | Reel | 20,000 |
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ESD11N Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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ESD11N5.0ST5G |
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ESD11N5.0 - DIODE BIDIRECTIONAL, SILICON, TVS DIODE, 0.60 X 0.30 MM, HALOGEN FREE AND ROHS COMPLIANT, CASE 152AA-01, DSN2, 2 PIN, Transient Suppressor | Original | 126.16KB | 6 | |||
ESD11N5.0ST5G |
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5V Bi Directional TVS in DSN Package | Original | 130.43KB | 4 |
ESD11N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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ESD11N5 ESD11N | |
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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ESD11N5 ESD11N | |
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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ESD11N5 ESD11N | |
TVS 0201 Diode
Abstract: PNC0106A 024 marking bidirectional diode
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ESD11N5 ESD11N TVS 0201 Diode PNC0106A 024 marking bidirectional diode | |
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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ESD11N5 ESD11N | |
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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ESD11N5 ESD11N | |
Contextual Info: NCN1154MUTGEVB NCN1154 DP3T USB 2.0 High Speed Audio Switch Evaluation Board User's Manual http://onsemi.com Prepared by: Bertrand RENAUD On Semiconductor EVAL BOARD USER’S MANUAL OVERVIEW and provide a safe path to ground for any charge that may build up on the audio lines. |
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NCN1154MUTGEVB NCN1154 EVBUM2003/D | |
ESD9l5.0ST5G
Abstract: SOT-723 sod 81 usb esd BRD8064-0 ESD9X12ST5G ESD11N ESD9B5.0ST5G ESD5B5 ESD5Z5.0S
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IEC61000-4-2 BRD8064-0 BRD8064/D ESD9l5.0ST5G SOT-723 sod 81 usb esd ESD9X12ST5G ESD11N ESD9B5.0ST5G ESD5B5 ESD5Z5.0S | |
2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
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SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F | |
Contextual Info: Bill of Materials for the NS5S1153MUGEVB Evaluation Board Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number U1 C1 C2 D1, D2, D3, D4, D5, TP3, TP4,D6TP5, TP6, TP7, TP8, TP9 VCC, GND 1 1 1 6 7 NS5S1153 Ceramic Capacitor SMD |
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NS5S1153MUGEVB NS5S1153 50pin UQFN10 J3523 C0805C105K9PACTU GRM155R60J103KA01D |