F2001 Search Results

Contextual Info: polyfet rf devices F2001 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F2001 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

TB188

Abstract: TB-188 850mu 20AWG 47UF F2001 SQ701
Contextual Info: TB188 Pout/Gain vs Pin Freq=1.5Mhz;Vds=24Vdc Idq=1.75A 40 40.0 38.0 36.0 32 P1dB =20W 34.0 Pout 32.0 24 30.0 28.0 16 26.0 Efficiency @20W = 45% 24.0 Gain 8 22.0 20.0 18.0 0.1 0.2 0.3 Pin in Watts 0.4 0.5 TB188 F2001->SQ701 Gain/Efficiency vs Freq; Vds=24Vdc Idq=1.75A

F2001

Contextual Info: polyfet rf devices F2001 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2001S

Contextual Info: polyfet rf devices F2001S General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: MBRF20020 R DACO SEMICONDUCTOR CO., LTD. TH RU MBR F200100(R) SCHOTTKY DIODE MODULE TYPES 200A Features High Surge Capability 200 Amp Rectifier 20-100 Volts Types Up to 100V VRRM FULL PACKAGE Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

crl 858

Abstract: 1422D 422d
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. LOW POWER RS-422 TRANSCEIVERS SPACE PRODUCTS 422D/Q2.5RH SEi422Q2.5RH VCC DE 1 SEi422D2.5RH Y1 DI 1 VCC Z1 A1 RE 1 RO 1 B1 DE 2 DE 1 Y1 DI 1 Z1 A1 RE 1 Y2 DI 2 Z2 A2 RE 2 RO 2 RO 1 DE 2 B1 DE 3 Y2 DI 3 Z2 A2 RE 3 B2 Y3 DI 2

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

MB15F04

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21342-1E ASSP Dual Serial Input PLL Frequency Synthesizer MB15F04 • DESCRIPTION The Fujitsu MB15F04 is a serial input Phase Locked Loop PLL frequency synthesizer with two 2.0GHz prescalers. A 64/65 or a 128/129 for both 2.0GHz prescalers can be selected that enables pulse swallow operation.

LE128

Abstract: MB40528 MB40528P MB40528PF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28206-2E ASSP 1 Channel 8-bit A/D Converter MB40528 • DESCRIPTION The MB40528 is a full parallel comparison flash type 8-bit resolution analog-to-digital converter, designed for various video and image processing applications.

FPT-20P-M04

Contextual Info: SHRINK SMALL OUTLINE L-LEADED PACKAGE 20 PIN PLASTIC FPT-20P-M04 EIAJ code : SSOP020-P-0225-2 20-pin plastic SSOP Lead pitch 0.65mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20mmMAX FPT-20P-M04 * : These dimensions do not include resin protrusion.

Contextual Info: SMALL OUTLINE L-LEADED PACKAGE 20 PIN PLASTIC FPT-20P-M05 EIAJ code : ∗SOP020-P-0375-2 20-pin plastic SOP Lead pitch 50mil Nominal dimensions 375mil Standard Conforms with EIAJ:TYPE III Lead shape Gullwing Sealing method Plastic mold FPT-20P-M05 20-pin plastic SOP

MB15G000

Abstract: SSOP-16 SSOP-20 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

Contextual Info: LINEAR 1C R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS MB88346B • DESCRIPTION The Fujitsu MB88346B is an R-2Rtype 8-bit resolution digital-to-anaiog converter DAC , designed for interface with a wide range of general 4bit and 8-bit microcontrollers including Fujitsu’s MB88200 family,

F2000ERW

Abstract: 217F f2001e
Contextual Info: F2000ERW Series Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H E E T MB88341/MB88342 R-2R TYPE 8-BIT D/A CONVERTER DESCRIPTION M B88341-P M B88342-P PLASTIC DIP D IP-20P-M 02 PLASTIC DIP (D IP-16P-M 04) MB88341-PF M B88342-PF The Fujitsu MB88341 and MB88342 are R -2R type 8 -b it resolution digital-to-analog

Contextual Info: cP June 1992 Edition 1.0A DATA S H E E T '• FUJITSU MB3790 BiCMOS Battery Backup 1C for Power Supplies The MB3790 is designed to control power supplies to SRAM, logic 1C, and other circuit devices. It uses backup batteries to protect these devices from momentary power failures,

Contextual Info: SHRINK SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 20 PIN PLASTIC To Top / Package Lineup / Package Index FPT-20P-M03 EIAJ code : SSOP020-P-0225-1 20-pin plastic SSOP Lead pitch 0.65 mm Lead shape Gullwing Sealing method Plastic mold Mounting height

910-A01

Contextual Info: May 1992 Edition 1.0A DATA SHEET FUJITSU MB88353 R-2R Type 12-Bit D/A Converter The Fujitsu MB88353 is an R-2R type 12-bit resolution digital-to-analog converter DAC . It is designed to interface with a wide range of general 4-bit and 8-bit microcontrollers including Fujitsu's MB88200 family, MB8850 family, and MB88500

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27701-4Ea ASSP For Power Management Applications Secondary battery DC/DC Converter IC for Charging MB3832A • DESCRIPTION The MB3832A is a pulse width modulation (PWM) DC/DC converter IC, incorporating a current detector amplifier

VCO 1.4 GHz

Abstract: MB15U10 MB15U10PFV FR29
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-21339-2E ASSP Dual Serial Input PLL Frequency Synthesizer On-Chip 1.1 GHz Prescaler MB15U10 • DESCRIPTION The Fujitsu MB15U10 is a dual serial input phase-locked loop PLL frequency synthesizer and is ideally suitable for mobile

LE128

Abstract: MB40528 MB40528P MB40528PF digital to analog converter
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28206-1E ASSP 1 CHANNEL 8-BIT A/D CONVERTER MB40528 • DESCRIPTION The MB40528 is a full parallel comparison flash type 8-bit resolution analog-todigital converter, designed for various video and image processing applications.

Contextual Info: Linear 1C Converter CMOS. . 12-Channel, 8"bit, on-chip OP amp, low-voltage • DESCRIPITON The Fujitsu MB88346L is an 8-bit D/A converter capable of low-voltage operation; and designed with a built-in amp on each ot its 12 analog output lines tor large-current drive capability.