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onsemi FCA76N60N MOSFET N-CH 600V 76A TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FCA76N60N	Tube	1,348		1	1 $19.19 10 $19.19 100 $12.71367 1000 $12.50617 10000 $12.50617	Buy Now
	FCA76N60N	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
FAIRCHILD FCA76N60N Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-3PN Rail
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Verical	FCA76N60N		92		25	1 - 10 - 100 $16.375 1000 $14.65 10000 $13.7875	Buy Now
Fairchild Semiconductor Corporation FCA76N60N 76 A, 600 V, 0.036 OHM, N-CHANNEL, SI, POWER, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FCA76N60N		63			1 $19.4014 10 $19.4014 100 $11.6408 1000 $11.6408 10000 $11.6408	Buy Now
Rochester Electronics	FCA76N60N		92		1	1 - 10 - 100 $13.1 1000 $11.72 10000 $11.03	Buy Now

FCA76N60N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FCA76N60N		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-3PN		Original	PDF		8

FCA76N60N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FCA76N60N Abstract: SJ 76 A DIODE Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology	Original	FCA76N60N FCA76N60N SJ 76 A DIODE	PDF
Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)	Original	FCA76N60N	PDF
SJ 76 A DIODE datasheet Abstract: SJ 76 A DIODE Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)	Original	FCA76N60N SJ 76 A DIODE datasheet SJ 76 A DIODE	PDF
FCA76N60N Abstract: FCA76N60 613 MOSFET Contextual Info: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)	Original	FCA76N60N 218nC) FCA76N60N FCA76N60 613 MOSFET	PDF