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    FDB035N10A Price and Stock

    onsemi FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    DigiKey FDB035N10A Cut Tape 1,405 1
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    FDB035N10A Digi-Reel 1,405 1
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    FDB035N10A Reel 0 Weeks, 2 Days 117
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    Mouser Electronics FDB035N10A 28,367
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    Verical FDB035N10A 12,000 800
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    FDB035N10A 510 9
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    FDB035N10A 267 2
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    Arrow Electronics FDB035N10A Cut Strips 267 8 Weeks 1
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    Newark FDB035N10A Reel 4,000 800
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    FDB035N10A Cut Tape 502 1
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    FDB035N10A Reel 800
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    Future Electronics FDB035N10A Reel 18,400 19 Weeks 800
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    Onlinecomponents.com FDB035N10A
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    TME FDB035N10A 1
    • 1 $5.78
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    Richardson RFPD FDB035N10A 800
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    Avnet Asia FDB035N10A 8 Weeks 800
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    Chip One Stop FDB035N10A Cut Tape 510 0 Weeks, 1 Days 1
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    EBV Elektronik FDB035N10A 10 Weeks 800
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    Flip Electronics FDB035N10A 1,600
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    IBS Electronics FDB035N10A 790 1
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    New Advantage Corporation FDB035N10A 51,030 1
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    Fairchild Semiconductor Corporation FDB035N10A

    FDB035N10A by Fairchild is a N-channel MOSFET with 100V max drain-source voltage, 35A continuous drain current, 4.5mOhm on-resistance, and operates in a TO-220 package, ideal for power management applications.
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    IBS Electronics FDB035N10A 74,400 800
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    Vyrian FDB035N10A 4,133
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    Win Source Electronics FDB035N10A 9,600
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    • 100 $4.1709
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    FDB035N10A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FDB035N10A
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A D2PAK Original PDF 9

    FDB035N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    solar charge circuit max 856

    Abstract: FDB035N10A
    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDB035N10A FDB035N10A solar charge circuit max 856 PDF

    TO254P1524X482-3N

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDB035N10A FDB035N10A TO254P1524X482-3N PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDB035N10A FDB035N10A PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDB035N10A PDF

    dual diode marking A3

    Contextual Info: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDB035N10A FDB035N10A dual diode marking A3 PDF