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    FDB088N08 Search Results

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    FDB088N08 Price and Stock

    onsemi FDB088N08

    MOSFET N-CH 75V 120A D2PAK
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    DigiKey FDB088N08 Cut Tape 320 1
    • 1 $3.52
    • 10 $2.302
    • 100 $1.6085
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    FDB088N08 Digi-Reel 1
    • 1 $3.52
    • 10 $2.302
    • 100 $1.6085
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    FDB088N08 Reel 800
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    Avnet Americas FDB088N08 Reel 4 Weeks 266
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    FDB088N08 Reel 0 Weeks, 2 Days 527
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    FDB088N08 Reel 22 Weeks 800
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    Mouser Electronics FDB088N08 568
    • 1 $3.31
    • 10 $2.31
    • 100 $1.61
    • 1000 $1.17
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    Newark FDB088N08 Reel 800
    • 1 $1.59
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    • 1000 $1.59
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    Onlinecomponents.com FDB088N08
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    • 1000 $1.22
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    Rochester Electronics FDB088N08 5,680 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.29
    • 1000 $1.17
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    TME FDB088N08 1
    • 1 $2.5
    • 10 $2.22
    • 100 $1.79
    • 1000 $1.65
    • 10000 $1.65
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    Richardson RFPD FDB088N08 800
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    Avnet Silica FDB088N08 23 Weeks 800
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    EBV Elektronik FDB088N08 41 Weeks 800
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    Flip Electronics FDB088N08 1,340
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    onsemi FDB088N08_F141

    MOSFET N-CHANNEL 75V 120A D2PAK
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    DigiKey FDB088N08_F141 Reel
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    Fairchild Semiconductor Corporation FDB088N08

    MOSFET N-CH 75V 75A D2PAK
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    Win Source Electronics FDB088N08 25,290
    • 1 -
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    • 100 $3.203
    • 1000 $3.203
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    FDB088N08 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDB088N08 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 75A D2PAK Original PDF

    FDB088N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDB088N08 N-Channel PowerTrench MOSFET 75 V, 85 A, 8.8 mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s adcanced PowerTrench® process that has been tai- • Fast Switching Speed


    Original
    PDF FDB088N08 FDB088N08

    FDB08

    Abstract: FDB088N08
    Text: FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


    Original
    PDF FDB088N08 FDB08 FDB088N08

    FDB08

    Abstract: FDB088N08
    Text: FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


    Original
    PDF FDB088N08 FDB08 FDB088N08

    fdb fairchild

    Abstract: FDB08 Fairchild MOSFET FDB088N08
    Text: FDB088N08 tm N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


    Original
    PDF FDB088N08 fdb fairchild FDB08 Fairchild MOSFET FDB088N08

    Untitled

    Abstract: No abstract text available
    Text: FDB088N08 N-Channel PowerTrench MOSFET 75 V, 85 A, 8.8 mΩ Features Description • RDS on = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    PDF FDB088N08