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    FDD7N25LZ Search Results

    FDD7N25LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD7N25LZTM
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 6.2A DPAK-3 Original PDF 8
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    FDD7N25LZ Price and Stock

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    onsemi FDD7N25LZTM

    MOSFET N-CH 250V 6.2A DPAK
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    Fairchild Semiconductor Corporation FDD7N25LZTM

    Power Field-Effect Transistor, 6.2A, 250V, 0.57ohm, N-Channel, MOSFET, TO-252AA
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    FDD7N25LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fdd7n25

    Abstract: fdd7n25lz
    Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD7N25LZ FDD7N25LZ fdd7n25 PDF

    Contextual Info: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS on = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A • Low Gate Charge ( Typ.12nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDD7N25LZ PDF

    Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD7N25LZ PDF

    fdd7n25lz

    Abstract: fdd7n25
    Contextual Info: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS on = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD7N25LZ FDD7N25LZ fdd7n25 PDF

    fdd7n25

    Abstract: FDD7N25LZ
    Contextual Info: UniFET TM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description • RDS on = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS


    Original     		FDD7N25LZ fdd7n25 FDD7N25LZ PDF