FM22L16 Search Results

Contextual Info: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

FM22L16-55-TG

Abstract: FM20L08 FM22L16 256KX16
Contextual Info: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

TSOP-II 44 Recommended PCB Footprint

Abstract: FM22L16-55-TG FM22L16
Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22L16 FM22L16-55-TG FM22L16-5 e1 fram
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 MS-024g TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

TSOP-II 44 Recommended PCB Footprint

Abstract: FM22L16-55
Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

FM22L16

Abstract: FM22L16-55-TG
Contextual Info: Pre-Production FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22L16 4-Mbit 256Kx16 Asynchronous F-RAM Memory Features SRAM Compatible • JEDEC 256Kx16 SRAM Pinout • 55 ns Access Time, 110 ns Cycle Time Advanced Features • Software Programmable Block Write Protect Description The FM22L16 is a 256Kx16 nonvolatile memory that

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

FM22L16

Contextual Info: K o m p o n e n te r Nu kommer FRAM med kapacitet D etta tilligg v e n d a n iv i n u tb i itJU »ig tm vket vai i u m fo teb e m ed d e le m id i tju m a t b r tom b i v i a v m in g a andra minttetteknologicr. D etta g ò * F R A M idi E n ró rtg a ism re tsig i

fm23mld16

Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

Contextual Info: TWR-FRAM F‐RAM Memory Module Quick Start Guide Rev. 1.0 Contents 1 Overview . 3

FM22L16

Abstract: TULSA 130-nanometer RAMTRON Texas Memory Systems 130nm CMOS power
Contextual Info: Ramtron claims industry first with 4Mb nonvolatile FRAM chip, Small . . Print this article Close Ramtron claims industry first with 4Mb nonvolatile FRAM chip Mar. 14, 2007 - Ramtron International Corp., Colorado Springs, CO, has launched what it calls the semiconductor industry's

chn 734

Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

FM24CL64b

Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

FM25L

Abstract: TSMC 40nm TSMC Flash 40nm D945GCLF2 TPS65950 D945GCLF powerpc 7448 IMAPCAR2 LG electronic confidential tanner tools
Contextual Info: Ramtron Introduces FM25V10 1-megabit Serial F-RAM ~ EDA Geek Page 1 of 2 home : : contact : : embedded star : : fpga : : eda blog EDA Geek - electronic design automation, semiconductor, embedded system Ads by Google RAM Picture 08 RAM SRT free journals : : jobs

FM22L16

Abstract: metallschicht
Contextual Info: Vogel online =. Druckversion Jetzt drucken EMBEDDED COMPUTING Embedded-Speicher-ICs FRAM mit bisher höchster Kapazität 16.05.2007 | Autor: Mike Alwais* FRAM überbrückt die Kluft zwischen den traditionellen