FM24C04 Search Results

FM24C04A

Abstract: FM24C04A-S FM24C64
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM24C04 4Kb F RAM ^ R a M lR O N Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

xicor X24C04

Contextual Info: FM24C04 FRAM Serial Memory r ^ M T R O N Product Preview Features I Two Wire 12C Serial Interface -Direct Replacement for Xicor X24C04 I Hardware Write Protection I True 5V Only Operation 18 Pin Mini-DIP and SOIC Packages 10° to 70°C Operating Range I 4,096-Bit Nonvolatile Ferroelectric RAM Organized

FM24C04

Abstract: FM24C04-P FM24C04-S MS-001
Contextual Info: FM24C04 ^ R3M TRO N 4Kb I RA M Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

fm24c04b

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

how to reset 24C04

Abstract: pin configurations of 24c04 1 24C04 wp eeprom 24c04 pin configuration "Ferroelectric RAM" 24C04 xicor FM24C04 24c04 reset 24C04 X24C04
Contextual Info: FM24C04 FRAM Serial Memory Product Specification Features 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b • Very Low Power CMOS Technology - 100µA Active Read or Write - 25µA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

FM24C04A-G

Abstract: FM24C04A-GTR FM24C04A FM24C04A-S FM24C64 FM24C04AGTR
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: I Benefits Of Ramtron’s FM24C04 Serial FRAM Memory ^pM T R O N s j \ ] _ n .! • s e r i a l V " . !; ¡ M ! K \ M '• m u n x > i ' \ . i 1 - v■ ■■r" | fa u ik s n n . V "ia \i ■a \ l n K ‘ i. a n d o k . n ' - ' k ‘ ' \ k p u p i l s :n I ' l g a i v

FM24C04

Abstract: 1E10 FM24C04-P FM24C04-S FM24C64
Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM24C02/04 1 /08(2)/16 2-Wire Serial EEPROM Data Sheet May. 2008 Note: 1. FM24C04 not recommend for new design, please refer to FM24C04A datasheet. 2. FM24C08 not recommend for new design please refer to FM24C08A datasheet. Data Sheet FM24C02/04/08/16 2-wrie Serial EEPROM

fm24c04-c-g

Contextual Info: Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM24C04 FRAM Serial Memory Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as512wx8b ■ Very Low Power CMOS Technology1 - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

fm24c04b

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

24U05

Abstract: 24U04 24u05 LN Fairchild 24U04 24u05LN FM24C04ULEM8 FM24C05ULM8 24U05N FM24C05UM8 Fairchild 24C04
Contextual Info: FM24C04U/05U – 4K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features The FM24C04U/05U devices are 4096 bits of CMOS non-volatile electrically erasable memory. These devices conform to all specifications in the Standard IIC 2-wire protocol. They are designed to

FM24C04

Abstract: FM24C04-P FM24C04-S FM24C64
Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24C04

Abstract: FM24C04-P FM24C04-S FM24C64
Contextual Info: FM24C04 4Kb FRAM Serial Memory Features Low Power Operation • 5V operation • 150 µA Active Current 100 kHz • 10 µA Standby Current 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion (1010) Read/Writes

Contextual Info: FM24C04B 4-Kbit 512 x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

EEPROM 256 bytes 24c

Abstract: fm24c04a-str FM24C04B FM24C04A FM24C04A-G FM24C04A-GTR FM24C04A-S FM24C64 A40003G D24CC
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Low Power Operation

Contextual Info: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet Sep. 2009 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.2 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

FM24C08A

Contextual Info: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.4 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;

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