FM25L16 Search Results

FM25L16B

Contextual Info: AEC Q100 Grade 1 Compliant FM25L16 – Automotive Temp. 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: FM25L16B-GTR fm25l16b-g
Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
Contextual Info: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25L16B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 16-Kbit (2 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

lter

Abstract: FM25L16 AEC-Q100 FM25L16-DG FM25L16-G FM25L16-GTR
Contextual Info: FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

FM25L16-G

Abstract: FM25L16-DG FM25640 FM25L16
Contextual Info: Preliminary FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

R5L16B

Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

R5L16B

Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25L16B

Abstract: FM25L16B-G R5L16B FM25L16 FM25L16B-DG AEC-Q100-002 FM25L16B-GTR RIC1047
Contextual Info: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L16

Abstract: FM25L16-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25L16 – Automotive Temp. 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L16

Abstract: FM25L16-DG FM25L16-G
Contextual Info: FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

Contextual Info: Pre-Production FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L16-GTR

Abstract: AEC-Q100 FM25L16 FM25L16-DG FM25L16-G FM25L16GTR
Contextual Info: FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

R5L16B

Abstract: FM25L16B
Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

FM25640

Abstract: FM25L16 FM25L16-DG FM25L16-G
Contextual Info: Pre-Production FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM3316

Abstract: FM33256-G FM25L16 FM33256 fm3316 drawing pfo 131
Contextual Info: Preliminary FM33256/FM3316 3V Integrated Processor Companion with Memory Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer

Contextual Info: Preliminary FM33256/FM3316 3V Integrated Processor Companion with Memory Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer

FM33256-G

Abstract: FM3316 FM33256 FM3316-G SN18 A7001 FM25L16 JESD22-A114-E FM33xx
Contextual Info: Pre-Production FM33256/FM3316 3V Integrated Processor Companion with Memory Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

fm23mld16

Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

FM25V10 I2C programming example

Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that

FM25L04

Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that

Contextual Info: FM24CL16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: Pre-Production FM33256/FM3316 3V Integrated Processor Companion with Memory Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Low VDD Detection Drives Reset  Watchdog Window Timer