FM28V020 Search Results

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-SG

Abstract: FM28V020-SGTR FM28V020 FM18L08
Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-SG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

28v020

Abstract: FM28V020 AN108 FM18L08
Contextual Info: AN108 Differences in FM18L08 and FM28V020 Applies to 256Kb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM18L08 and FM28V020 parallel F-RAM devices. For most designs, the FM28V020 device can be considered equivalent or better than the FM18L08. The two

FM28V020-TG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-T

Contextual Info: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: FM28V020 256-Kbit 32 K x 8 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

FM28V020-SG

Abstract: FM18L08 FM28V020 FM28V020-SGTR FM28V020-T FM28V020-TGTR
Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

FM18L08-70-SG

Abstract: FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

FM28V010

Abstract: 16KX8 16kx8 ram FM28V020
Contextual Info: Preliminary FM28V010 128Kbit Bytewide F-RAM Memory Features 128Kbit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

chn 734

Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

FM24CL64b

Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine