FMMT549 Search Results

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

FMMT449

Abstract: FMMT549 FMMT549A DSA003697
Contextual Info: FMMT549 FMMT549A TYPICAL CHARACTERISTICS ts td,tr,tf ns (ns) 180 0.8 IB1=IB2=IC/10 160 Switching time - (Volts) V 1400 120 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 0.1 1 PARAMETER SYMBOL VALUE UNIT 200 Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

Contextual Info: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - O C T O B E R 1995 O FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TY PES - FM M T549 - FM M T449 F M M T 5 4 9 A - N/A

FMMT549

Contextual Info: FMMT549 FAIRCHILD SEMICONDUCTOR FMMT549 #s B SuperS0T™-3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. A bsolu te Maximum Ratings* Ta = 2 5 °C unless otherw ise noted

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A 0.8 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – 150 IC/IB=10 0.6 E C FMMT549

Contextual Info: A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > -30V Maximum Continuous Collector Current IC = -1A

FMMT549

Abstract: pnp low saturation
Contextual Info: FMMT549 tm PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. • Sourced from process PB. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings *

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.

smd transistor marking 59A

Abstract: smd ic marking 1A SMD TRANSISTOR MARKING BR smd transistor 59A SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 FMMT549A transistor smd marking BR smd transistor marking 1A
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT549A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

549 SMD transistor

Contextual Info: Transistors IC Transistor SMD Type Product specification FMMT549 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

FMMT549

Abstract: SuperSOT-23 Fairchild Semiconductor - Process
Contextual Info: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector

transistor marking 2A H

Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.

Contextual Info: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - OCTOBER 1995 O FEATURES * Low equivalent on-resistance; RCE S8t|250m ii at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TYPES - FM M T549 F M M T 44 9 F M M T 5 4 9 A - N/A

Contextual Info: FMMT549 F A IR C H IL D S E M I C D N D U C T D R tm FMMT549 B SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturatior i voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*

Contextual Info: FMMT549 FMMT549A TYPICAL CHARACTERISTICS ts td,tr,tf ns (ns) 180 0.8 IB1=IB2=IC/10 160 Switching time - (Volts) V 1400 120 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 0.1 1 PARAMETER SYMBOL VALUE UNIT 200 Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

Contextual Info: FMMT549 F A IR C H IL D S E M IC O N D U C T O R tm FMMT549 B SuperSOT -3 SOT-23 PNP Low S a tu ra tio n T ra n s is to r These devices are designed with high current gain and low saturatior voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*

TRANSISTOR W25

Abstract: FMMT549
Contextual Info: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Contextual Info: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A 549 SMD transistor smd ic marking 1A FMMT549 smd transistor marking 1A 2a smd smd 2a transistor TRANSISTOR SMD 1a 9 smd 1A
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT549 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

FMMT549

Abstract: fmmt549a FMMT549TA 59a sot23
Contextual Info: A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > -30V Maximum Continuous Collector Current IC = -1A

7585ail

Abstract: EL7585A EL7585AILZ EL7585AILZ-T7
Contextual Info: EL7585A Data Sheet March 9, 2006 FN7523.3 TFT-LCD Power Supply Features The EL7585A represents a multiple output regulators for use in all large panel, TFT-LCD applications. It features a single boost converter with integrated 3.5A FET, two positive LDOs

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER FZT589 HIGH PERFORMANCE TRANSISTOR ISSUE 2 - OCTOBER 1995 - PARTMARKING DETAILS - FZT589 COM PLEMENTARY TYPES - FZT489 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE

Contextual Info: EL7520, EL7520A Data Sheet July 12, 2005 FN7318.0 4-Channel DC/DC Controller Features EL7520 and EL7520A are 4-channel DC/DC controllers that provide a complete power supply system for TFT-LCD applications. They consist of a 1MHz PWM boost controller, which generates the main voltage for the column driver, and

Contextual Info: ISL78010 Data Sheet May 3, 2011 Automotive Grade TFT-LCD Power Supply Features The ISL78010 is a multiple output regulator for use in all TFT-LCD automotive applications. It features a single boost converter with an integrated 2A FET, two positive LDOs for