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    FQB47P06 Search Results

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    FQB47P06 Price and Stock

    onsemi FQB47P06TM-AM002

    MOSFET P-CH 60V 47A D2PAK
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    DigiKey FQB47P06TM-AM002 Digi-Reel 1,824 1
    • 1 $3.91
    • 10 $2.707
    • 100 $3.91
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    FQB47P06TM-AM002 Cut Tape 1,824 1
    • 1 $3.91
    • 10 $2.707
    • 100 $3.91
    • 1000 $3.91
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    FQB47P06TM-AM002 Reel 800 800
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    Mouser Electronics FQB47P06TM-AM002 60,382
    • 1 $3.31
    • 10 $2.48
    • 100 $1.92
    • 1000 $1.66
    • 10000 $1.62
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    Verical FQB47P06TM-AM002 790 4
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    • 10 $2.298
    • 100 $1.879
    • 1000 $1.784
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    Arrow Electronics FQB47P06TM-AM002 2,400 22 Weeks 800
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    FQB47P06TM-AM002 Cut Strips 790 22 Weeks 1
    • 1 $2.989
    • 10 $2.298
    • 100 $1.879
    • 1000 $1.784
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    Newark FQB47P06TM-AM002 Cut Tape 230 1
    • 1 $4.04
    • 10 $3.44
    • 100 $2.85
    • 1000 $2.56
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    FQB47P06TM-AM002 Reel 800
    • 1 $2.09
    • 10 $2.09
    • 100 $2.09
    • 1000 $2.09
    • 10000 $1.86
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    Onlinecomponents.com FQB47P06TM-AM002
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    TME FQB47P06TM-AM002 740 1
    • 1 $2.98
    • 10 $2.64
    • 100 $2.21
    • 1000 $2.05
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    Richardson RFPD FQB47P06TM-AM002 800
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    Avnet Silica FQB47P06TM-AM002 23 Weeks 800
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    EBV Elektronik FQB47P06TM-AM002 24 Weeks 800
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    onsemi FQB47P06TM_AM002

    Power MOSFET, P Channel, 60 V, 47 A, 26 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FQB47P06TM-AM002)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FQB47P06TM_AM002 Reel 22 Weeks 800
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    • 1000 $1.6215
    • 10000 $1.56302
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    FQB47P06TM_AM002 Reel 22 Weeks 800
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    • 1000 $1.6215
    • 10000 $1.56302
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    Newark FQB47P06TM_AM002 Cut Tape 800
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    • 1000 $2.23
    • 10000 $2.23
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    Avnet Asia FQB47P06TM_AM002 22 Weeks 800
    • 1 -
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    • 100 -
    • 1000 $1.74882
    • 10000 $1.64086
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    Aptina Imaging FQB47P06TM_AM002

    Trans MOSFET P-CH 60V 47A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical FQB47P06TM_AM002 2,400 800
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    • 1000 $1.5976
    • 10000 $1.5976
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    Fairchild Semiconductor Corporation FQB47P06TM_AM002

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    Bristol Electronics FQB47P06TM_AM002 1,161
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    Fairchild Semiconductor Corporation FQB47P06

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    Bristol Electronics FQB47P06 250
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    FQB47P06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB47P06 Fairchild Semiconductor 60 V P-Channel MOSFET Original PDF
    FQB47P06TM Fairchild Semiconductor 60V P-Channel QFET Original PDF
    FQB47P06TM_AM002 Fairchild Semiconductor 60V P-Channel QFET Original PDF
    FQB47P06TM_AM002 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 47A D2PAK Original PDF
    FQB47P06TM-AM002 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 47A D2PAK Original PDF

    FQB47P06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQI47P06 FQI47P06TU O-262

    47p06

    Abstract: P-CHANNEL MOSFET Z 47A
    Text: QFET FQB47P06 / FQI47P06 TM tm 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06/FQI47P06 FQB47P06 FQI47P06 O-263 FQB47P06TM AM002 47p06 P-CHANNEL MOSFET Z 47A

    Untitled

    Abstract: No abstract text available
    Text: FQB47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    PDF FQB47P06 FQB47P06

    FQB47P06

    Abstract: FQI47P06
    Text: QFET TM FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQI47P06

    Untitled

    Abstract: No abstract text available
    Text: FQB47P06 / FQI47P06 September 2000 QFET TM FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06

    FQB47P06TM

    Abstract: No abstract text available
    Text: QFET TM FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQB47P06TM O-263 FQB47P06TM

    Untitled

    Abstract: No abstract text available
    Text: FQB47P06 / FQI47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    PDF FQB47P06 FQI47P06 FQI47P06

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB47P06 / FQI47P06 TM tm 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06/FQI47P06 FQB47P06 FQI47P06

    FQB47P06

    Abstract: FQI47P06
    Text: QFET TM FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQI47P06

    FQB47P06

    Abstract: FQI47P06
    Text: QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQB47P06/FQI47P06 FQI47P06

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQB47P06/FQI47P06

    FQB47P06

    Abstract: FQI47P06
    Text: QFET FQB47P06 / FQI47P06 TM tm 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQB47P06 FQI47P06 FQB47P06/FQI47P06 FQI47P06

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


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    PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original
    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd