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IRF820 Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422 Contextual Info: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •	OCR Scan	IRF820/821/822/823 IRF820 IRF821 IRF822 IRF823 O-220 7Tb414S QG1731L, IRF820/821/822/823 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422	PDF

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IRF820

Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422
Contextual Info: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •

OCR Scan

IRF820/821/822/823 IRF820 IRF821 IRF822 IRF823 O-220 7Tb414S QG1731L, IRF820/821/822/823 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422

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