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Catalog Datasheet	Type	Document Tags	PDF
GE006367 Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features	OCR Scan	GE006367 80-Serie LD260 GE006367	PDF
T20 96 diode Abstract: LD260 LD261-5/6 LD262 LD261 diode Contextual Info: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)	OCR Scan	GE006367 LD261 LD262 LD263 LD260 electronic50 lp-50 LD260-26B T20 96 diode LD261-5/6 LD261 diode	PDF
UV diode 250 nm Abstract: SFH 508 SFH291 Contextual Info: 3FW 2S1 SIEMENS High UV Sensitivity Silicon PiìolocHocle Dim ensions in inches mm 236(6.0) 134(3.4) '118(3.0) .570 (14.5) .491(12.5) 228 (5.8) Active die area It .200 0.326(8.3) 0.314(8.0) Anode (5.08) J _ r 0 .373 (9.5) 0 .354 (9.0) u 1 0.018(0.45) GE006367	OCR Scan	GE006367 9X1CT14 6X1012 OHF01 SFH291 UV diode 250 nm SFH 508 SFH291	PDF
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 7.4 LD 260 LD 262 . LD 269 Chip in O CO (O o N GE006367 (O CO (O o o 0 Cathode (LD 263) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale	OCR Scan	GE006367 80-Serie	PDF
Contextual Info: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85	OCR Scan	BPX81 BPX82â BPX82 GE006367 1000lx, 950nm BPX81-3 BPX81-4 BPX81-2	PDF
Contextual Info: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent	OCR Scan	41IAI 18-pln fl535t	PDF
U850 diode Abstract: U850 KOM2108 84X101 Contextual Info: SIEMENS features • Suitable for use in the visible light and near Infrared range • Low noise • Short switching time typ. 10 ne • Every single diode can be activated KOM2t08 5 x 5 Silicon PIN Photodiode Array Dimensions in inches (mm) i Chip position Epoxy resin transparent	OCR Scan	KOM2t08 4x101l! KOM2108 U850 diode U850 KOM2108 84X101	PDF