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MGF4310 Abstract: 6020M f491 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491	PDF

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MGF4310

Abstract: 6020M f491
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

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F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491

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