GG04B Search Results
GG04B Price and Stock
ASSMANN WSW components GmbH AW140-EG-G04BPIN HEADER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AW140-EG-G04B | Bulk | 32,000 |
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GG04B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IS621K30
Abstract: IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215
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GG04b34 IS621K30 IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215 | |
Contextual Info: 54E D SONY* • fl3023û3 GG04b?7 743 « S O N Y 7^ /6 *-«2? CXK58257AP/AM 12LB 32768-word x 8-bit High Speed CMOS Static RAM SO NY C O R P / C O M P O N E N T PROD S Description CXK58257AP/AM is a general purpose high speed CMOS static RAM organized as 32768 words by 8 bits. |
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fl3023Ã GG04b CXK58257AP/AM 32768-word CXK58257AP CXK58257AM 240ns 120ns | |
S24L2Contextual Info: SME D SONY A3fl23fl3 GG04b47 TDfc. « S O N Y - '3 CXK58257ATM/AYM -70LL/85LL/10LL/12LL 70L/85L/10L/12L 32768-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT PRODS Description C X K 5 8 2 5 7 A T M /A Y M is a 256K toits, 32,768 w o rds by 8 bits, CMOS static RAM. |
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0D04b47 CXK58257ATM/AYM -70LL/85LL/1 OLL/12LL 32768-word CXK58257ATM/AYM CXK58257ATM CXK58257AYM CXK5825Ta S24L2 | |
Hall Effect 03E
Abstract: UGN3120T UGS-3120T Sprague Hall Effect
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S513fiSD GG04b3b UGN-3120T/U UGS-3120T/U UGS-3120T/U Hall Effect 03E UGN3120T UGS-3120T Sprague Hall Effect | |
Contextual Info: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2522-01MR 20Ki2) | |
Contextual Info: ADVANCE MT4 L C1M16CX S 1 MEG X 16 DRAM IURN blllSHT I3004b21 4HT p ilC R O N MICRON TECHNOLOGY INC SSE » DRAM X 1 6 D R A M m 1 M E G 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES PIN ASSIGNMENT (Top View) • Self Refresh, ie "Sleep Mode" |
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C1M16CX I3004b21 MT4C1M16CX MT4LC1M16CX MT4C1M16C3/5 C1M16CXS 0004b44 | |
IC-8823
Abstract: one chip tv ic 8823 ic8823 circuit diagram IC 8823 78352 RBS 2202 upd78p352kk IEU-781 d78350
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uPD78352A 16/8-bit 78K/III 16-bit PD78352A /xPD78350A PD78352A. zPD78P352 /iPD78352A. IC-8823 one chip tv ic 8823 ic8823 circuit diagram IC 8823 78352 RBS 2202 upd78p352kk IEU-781 d78350 | |
reticon tad-32Contextual Info: il e / 3 .1 3 O C T in n M RETICO N TD Serles Unidirectional TDI Array Introduction EG&G Reticon’s Unidirectional TDI arrays are high-speed, CCD imagers designed to operate in the Time Delay Integration TDI mode. Applications for Reticon TDI arrays include industrial |
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RC0511 ANN-011 0004b4fl reticon tad-32 | |
Contextual Info: ¡ENICONDUCTOR INC Tñ TTbMlME □□Cmt.70 M r 7 ^ 5 ^ //-r 3 KA78TXXC/KA78TXXAC SERIES LINEAR INTEGRATED CIRCUIT 3A POSITIVE VOLTAGE REGULATOR This family o f fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 amperes. These three. terminal regulators employ internal current limiting, thermal shutdown, |
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KA78TXXC/KA78TXXAC KA78T00 2N4398 | |
Contextual Info: Lattice ispLSI' and pLSI’ 2096 ; Semiconductor I Corporation High Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC Output Routing Pool ORP — — — — — 4000 PLD Gates 96 I/O Pins, Six Dedicated Inputs |
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128-P 041A-08isp/2096 | |
Contextual Info: Tem ic M 67132/M 67142 MATRA MHS 2 K x 8 CMOS Dual Port RAM Description The M 67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual |
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5Bbfi45b GG04b04 |