GT50J301 Search Results

GT50J301

Abstract: bipolar power transistor data toshiba set igbt on off Vge
Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT50J301

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)

Contextual Info: TO S H IBA GT50J301 T O S H IB A IN S U L A T E D G ATE B IP O L A R TR A N S IS T O R SILICO N N C H A N N E L IG BT GT50J301 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S Z0.5M AX. The 3rd Generation

gt50j301

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage

Contextual Info: TOSHIBA GT50J301 T O S H IB A IN SU LA TED GATE B IP O LA R TRA N SISTO R SILICON N C H A N N EL IGBT GT50J301 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S U nit in mm M O T O R CO N TRO L A PPLIC A TIO N S 20.5MAX. ¡2 3.3 ±0.2 The 3rd Generation Enhancement-Mode

vgea

Abstract: GT50J301
Contextual Info: TOSHIBA GT50J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT50J301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V ce (sat) —2.7V (Max.)

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT50J301

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. z Low saturation voltage

Contextual Info: TOSHIBA GT50J301 TO S H IB A IN S U LA TED G A T E B IP O LA R TR A N SISTO R SILICO N N C H A N N EL IG BT GT50J301 HIGH PO W ER SW ITC H IN G A P PLIC A TIO N S U nit in mm M O TO R C O N TR O L A P PLIC A TIO N S The 3rd Generation Enhancement-Mode High Speed

P channel 50A IGBT

Contextual Info: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector

IC LM3

Contextual Info: GT50J301 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S 20 5 MAX. 8>3 3 t 0 2 The 3rd Generation Enhancement-M ode H ig h sp eed : tf= 0.30/iS Max. Low Saturation Voltage : V cE(sat) = 2-7V (Max.)

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

gt5q

Contextual Info: T O SH IB A GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5QJ3Q1 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS i- K The 3rd Generation : 1.5 Enhancement-Mode H ig h sp e e d 0 3 .3 ± 0.2 20.5 MAX. o

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243