Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT50JR21 Search Results

    GT50JR21 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    GT50JR21
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    GT50JR21 Price and Stock

    Toshiba America Electronic Components GT50JR21(STA1,E,S)

    IGBT 600V 50A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT50JR21(STA1,E,S) Tube 3 1
    • 1 $6.54
    • 10 $6.54
    • 100 $3.1984
    • 1000 $2.73124
    • 10000 $2.73124
    Buy Now
    Avnet Americas GT50JR21(STA1,E,S) Tray 12 Weeks 25
    • 1 -
    • 10 -
    • 100 $2.51275
    • 1000 $2.42535
    • 10000 $2.42535
    Buy Now
    Mouser Electronics GT50JR21(STA1,E,S)
    • 1 $6.51
    • 10 $6.45
    • 100 $3.17
    • 1000 $2.73
    • 10000 $2.73
    Get Quote
    TME GT50JR21(STA1,E,S) 1
    • 1 $4.64
    • 10 $3.68
    • 100 $3.31
    • 1000 $3.31
    • 10000 $3.31
    Get Quote
    EBV Elektronik GT50JR21(STA1,E,S) 21 Weeks 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Toshiba America Electronic Components GT50JR21STA1ES

    SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GT50JR21STA1ES 150
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Toshiba America Electronic Components GT50JR21STA1

    SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GT50JR21STA1 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    GT50JR21 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    GT50JR21
    Toshiba Japanese - Transistors Original PDF 313.65KB 7
    GT50JR21
    Toshiba Transistors Original PDF 206.14KB 7
    GT50JR21(STA1,E,S)
    Toshiba Semiconductor and Storage PB-F IGBT / TRANSISTOR TO-3PN(OS Original PDF 206.68KB 7

    GT50JR21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT50JR21

    Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 GT50JR21 PDF

    Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 PDF

    Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 PDF

    Contextual Info: GT50JR21 ディスクリートIGBT シリコンNチャネルIGBT GT50JR21 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長


    Original
    GT50JR21 PDF