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    H02N60 Search Results

    H02N60 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H02N60 Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60E Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60F Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60I Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60J Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60S Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SE Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SF Hi-Sincerity Mocroelectronics N-channel High Voltage MOSFET Original PDF
    H02N60SI Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H02N60SJ Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF

    H02N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original
    PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original
    PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original
    PDF MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749

    H02N65

    Abstract: H02N60E H02N60F h02n
    Text: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original
    PDF MOS200910 H02N65 O-220AB 183oC 217oC 260oC 245oC 10sec H02N60E H02N60F h02n