H02N60 Search Results
H02N60 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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H02N60 | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60E | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60F | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60I | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60J | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60S | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60SE | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60SF | Hi-Sincerity Mocroelectronics | N-channel High Voltage MOSFET | Original | |||
H02N60SI | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original | |||
H02N60SJ | Hi-Sincerity Mocroelectronics | N-Channel Power Field Effect Transistor | Original |
H02N60 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
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Original |
MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E | |
2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
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Original |
MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 | |
MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
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Original |
MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749 | |
H02N65
Abstract: H02N60E H02N60F h02n
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Original |
MOS200910 H02N65 O-220AB 183oC 217oC 260oC 245oC 10sec H02N60E H02N60F h02n |