H5N5016PL Search Results

H5N5016PL Price and Stock

Filter by Manufacturer


Rochester Electronics LLC H5N5016PL-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H5N5016PL-E	Bulk			22	1 - 10 - 100 $13.98 1000 $13.98 10000 $13.98	Buy Now
Renesas Electronics Corporation H5N5016PL-E0-E-T2 NCH POWER MOSFET 500V 50A 128MOH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H5N5016PL-E0-E-T2	Tray			125	1 - 10 - 100 - 1000 $34.82624 10000 $34.82624	Buy Now
Renesas Electronics Corporation H5N5016PL-E0-E#T2 NCH POWER MOSFET 500V 50A 128MOHM TO-264 - Trays (Alt: H5N5016PL-E0-E#T2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	H5N5016PL-E0-E#T2	Tray		111 Weeks	125	1 $37.14 10 $37.14 100 $37.14 1000 $37.14 10000 $37.14	Buy Now
Renesas Electronics Corporation H5N5016PL-E Trans MOSFET N-CH Si 500V 50A 3-Pin(3+Tab) TO-3PL Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	H5N5016PL-E		42		25	1 - 10 - 100 $15.9625 1000 $14.275 10000 $13.4375	Buy Now
Rochester Electronics	H5N5016PL-E		42		1	1 - 10 - 100 $12.77 1000 $11.42 10000 $10.75	Buy Now

H5N5016PL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
H5N5016PL		Renesas Technology	Silicon N Channel MOS FET		Original	PDF	100.36KB	7

H5N5016PL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching R07DS1200EJ0100 Rev.1.00 Mar 25, 2014 Features • Low on-resistance RDS on = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching	Original	H5N5016PL-E0-E R07DS1200EJ0100 PRSS0003ZC-A O-264) Imped2886-9022/9044	PDF
H5N5016PL-E Abstract: H5N5016PL PRSS0004ZF-A Contextual Info: H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0300 Rev.3.00 May 13, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A	Original	H5N5016PL REJ03G0175-0300 PRSS0004ZF-A H5N5016PL-E H5N5016PL PRSS0004ZF-A	PDF
H5N5016PL Contextual Info: H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain Flange	Original	H5N5016PL REJ03G0175-0200Z H5N5016PL	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H5N5016PL Abstract: H5N5016PL-E PRSS0004ZF-A Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF