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hfi9n50 Abstract: HFI9 Contextual Info: BVDSS = 500 V RDS on typ = 0.58 Ω HFW9N50 / HFI9N50 ID = 9.0 A 500V N-Channel MOSFET D2-PAK I2-PAK HFW9N50 HFI9N50 FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances	Original	HFW9N50 HFI9N50 HFW9N50 hfi9n50 HFI9	PDF

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hfi9n50

Abstract: HFI9
Contextual Info: BVDSS = 500 V RDS on typ = 0.58 Ω HFW9N50 / HFI9N50 ID = 9.0 A 500V N-Channel MOSFET D2-PAK I2-PAK HFW9N50 HFI9N50 FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

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HFW9N50 HFI9N50 HFW9N50 hfi9n50 HFI9

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