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    Rochester Electronics LLC HGT1S3N60A4DS9A

    N-CHANNEL IGBT
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    DigiKey HGT1S3N60A4DS9A Tube 167
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    onsemi HGT1S3N60A4DS9A

    IGBT 600V 17A 70W D2PAK
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    Fairchild Semiconductor Corporation HGT1S3N60A4DS9A

    Insulated Gate Bipolar Transistor, 17A, 600V, N-Channel, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGT1S3N60A4DS9A 4,713 1
    • 1 $1.73
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    HGT1S3N60A4DS Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGT1S3N60A4DS Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGT1S3N60A4DS Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGT1S3N60A4DS Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGT1S3N60A4DS Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Scan PDF
    HGT1S3N60A4DS9A Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGT1S3N60A4DS9A Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Scan PDF

    HGT1S3N60A4DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N60A4D

    Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A
    Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4D 3n60a4 HGT1S3N60A4DS9A N-Channel mosfet 400v 25A

    3n60a4d

    Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60
    Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3n60

    3n60a4d

    Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4
    Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3N60A4

    3N60A4

    Abstract: No abstract text available
    Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		PDF HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D

    smps 500W

    Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
    Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT


    Original     		PDF 100kHz 100kHz HGTG12N60A4 O-252AA O-220AB T0-263AB O-268 Breakdown/10 100ns 200ns smps 500W smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		PDF FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S

    600V igbt dc to dc buck converter

    Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
    Text: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum


    Original     		PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    HGTG30N60A4

    Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
    Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns


    Original     		PDF 110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S

    JESD22-A108

    Abstract: JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit
    Text: Date Created: 4/6/2004 Date Issued: 4/19/2004 PCN # 20041405 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL References FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. FGB20N6S2D FGB30N6S2 FGB30N6S2T FGH20N6S2 FGH30N6S2D FGH50N3 FGH60N6S2 FGP20N6S2D FGP40N6S2 JESD22-A108 JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit

    3N60A4D

    Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
    Text: HGT1S3N60A4DS, HGTP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		PDF HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688