HGTG20N120E2 Search Results

Contextual Info: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE

TA49009

Contextual Info: HGTG20N120E2 34A, 1200V N-Channel IGBT December 1993 Package Features • JEDEC STYLE TO-247 TOP VIEW 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance i COLLECTOR • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch­

Contextual Info: HGTG20N120E2 Transistors N-Channel IGBT V BR CES (V)1200 V(BR)GES (V) I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.

G20N120E2

Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG
Contextual Info: HGTG20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL

G20N120E2

Abstract: AN7254 AN7260 HGTG20N120E2 LD26
Contextual Info: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss

igbt 400V 20A

Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
Contextual Info: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .

20N120E2

Contextual Info: S m a r r ì H G T G 2 0 N 120E2 34A, 1200V N-Channel IGBT A pril 1995 Package Features JE D E C S TYLE TO -247 • 3 4 A ,1 2 0 0 V • L atch F ree O p era tio n • Typ ica l Fall T im e - 7 80 n s • H igh In p u t Im p e d a n c e • Lo w C o n d u c tio n Loss

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: