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Ushio Opto Semiconductors Inc HL8340MG-A 852nm / 50mW GaAlAs Laser Diode - Trays (Alt: HL8340MG-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HL8340MG-A	Tray		12 Weeks, 6 Days	39	1 - 10 - 100 $32.1904 1000 $24.6582 10000 $24.6582	Buy Now
Avnet Integrated HL8340MG-A LASERDIODE 852 10NM 50MW Geh 56mm (Alt: USHHL8340MGA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	HL8340MG-A			143 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

HL8340MG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
HL8340MG		OpNext	GaAlAs Laser Diode		Original	PDF	91.55KB	4

HL8340MG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HL8340MG ODE-208-067B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.	Original	HL8340MG ODE-208-067B HL8340MG HL8340MG:	PDF
HL8340MG Abstract: HL8341MG Contextual Info: HL8340MG/41MG ODE2056-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8340MG/41MG are 0.85 m band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.	Original	HL8340MG/41MG HL8340MG/41MG ODE2056-00 HL8340MG/41MG: HL8340MG HL8341MG HL8340MG HL8341MG	PDF
HL8340MG Abstract: ODE-208-067A Contextual Info: HL8340MG ODE-208-067A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.	Original	HL8340MG ODE-208-067A HL8340MG HL8340MG: ODE-208-067A	PDF
Contextual Info: Data Sheet HL8340MG/41MG GaAlAs Laser Diode 852nm/50mW Features: Outline • Infrared light output: 852nm Typ.  Single transverse mode  Optical output power: 50mW CW  Low operating current: 75mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: +60C	Original	HL8340MG/41MG 852nm/50mW 852nm HL8340MG/41MG	PDF
LD5033 Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet	Original	OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G	PDF
HL6362MG Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG Contextual Info: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated	Original	2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG	PDF