HM5401
Abstract: HM5551
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9503 Issued Date : 1996.04.09 Revised Date : 2002.08.27 Page No. : 1/4 HM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM5401 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE9503
HM5401
HM5401
OT-89
HM5551
HM5551
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PDF
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HE9503
Abstract: HM5401 HM5551
Contextual Info: HI-SINCERITY Spec. No. : HE9503 Issued Date : 1996.04.09 Revised Date : 2004.12.21 Page No. : 1/5 MICROELECTRONICS CORP. HM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM5401 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE9503
HM5401
HM5401
OT-89
HM5551
183oC
217oC
260oC
HE9503
HM5551
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PDF
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HM5401
Abstract: HM5551
Contextual Info: HI-SINCERITY Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM5551 is designed for general purpose applications requiring high breakdown voltages.
|
Original
|
HE9507
HM5551
HM5551
OT-89
HM5401
200oC
183oC
217oC
260oC
245oC
HM5401
|
PDF
|
HM5401
Abstract: HM5551
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2002.02.20 Page No. : 1/3 HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM5551 is designed for general purpose applications requiring high breakdown voltages.
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Original
|
HE9507
HM5551
HM5551
OT-89
HM5401
HM5401
|
PDF
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