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    ARCOTEK HM62W8511HJP-12

    SRAM ASYNC FAST 4MB 512Kx8 3.3V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HM62W8511HJP-12 Tube 1,033 100
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    • 100 $6.5
    • 1000 $6
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    HM62W8511HJP-12 Tube 1,033 100
    • 1 -
    • 10 -
    • 100 $6.5
    • 1000 $6
    • 10000 $6
    		Buy Now

    HM62W8511H Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HM62W8511H Hitachi Semiconductor 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HC Hitachi Semiconductor 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HC Renesas Technology 4m High Speed Sram (512-kword x 8-bit) Original PDF
    HM62W8511HCI Series Renesas Technology Wide Temperature Range Version 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HCJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HCJP-10 Hitachi Semiconductor 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HCJP-10 Renesas Technology 4M High Speed SRAM (512 kWord x 8 Bit) Original PDF
    HM62W8511HCJP-12 Renesas Technology 4M High Speed SRAM (512 kWord x 8 Bit) Original PDF
    HM62W8511HCJP/HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HCJP-HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HCJPI Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HCJPI-12 Renesas Technology 4M High Speed SRAM (512 kWord x 8 Bit) Original PDF
    HM62W8511HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HCLJP-10 Hitachi Semiconductor 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HCLJP-10 Renesas Technology 4M High Speed SRAM (512 kWord x 8 Bit) Original PDF
    HM62W8511HCLJP-12 Renesas Technology 4M High Speed SRAM (512 kWord x 8 Bit) Original PDF
    HM62W8511HC Series Renesas Technology 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HI Hitachi Semiconductor 4M High Speed SRAM (512-kword x 8-bit) Original PDF
    HM62W8511HJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM62W8511HJP-10 Hitachi Semiconductor 524288-word x 8-bit High Speed CMOS Static RAM Original PDF

    HM62W8511H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM62W8511HI

    Abstract: HM62W8511HJPI HM62W8511HJPI-15 512KWORD Hitachi DSA0044
    Text: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W8511HI 512-kword ADE-203-1036A 400mil 36-pin HM62W8511HJPI HM62W8511HJPI-15 512KWORD Hitachi DSA0044

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283 (Z) Preliminary Rev. 0.0 Jul. 13, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high


    Original     		PDF HM62W8511HCI 512-kword ADE-203-1283 400-mil 36-pin D-85622 Hitachi DSA00280

    8 to 32 decoder

    Abstract: diode a17 diode a3 transistor A17 HM62W8511HC
    Text: HM62W8511HC Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 (MSB) VCC Row decoder 1024-row x 32-column × 16-block × 8-bit (4,194,304 bits) VSS CS Column I/O I/O1 . . Input data control Column decoder . I/O8 A8 A9 A18 A16 A17 A0 A2 A4 A15 (LSB)


    Original     		PDF HM62W8511HC 1024-row 32-column 16-block 8 to 32 decoder diode a17 diode a3 transistor A17

    diode a1

    Abstract: diode a3
    Text: HM62W8511HCI Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 (MSB) VCC Row decoder 1024-row x 32-column × 16-block × 8-bit (4,194,304 bits) VSS CS Column I/O I/O1 . . Input data control Column decoder . I/O8 A8 A9 A18 A16 A17 A0 A2 A4 A15


    Original     		PDF HM62W8511HCI 1024-row 32-column 16-block diode a1 diode a3

    36-PIN

    Abstract: No abstract text available
    Text: HM62W8511HI Series Ordering Information Type No. Access time Package HM62W8511HJPI-15 15 ns 400-mil 36-pin plastic SOJ CP-36D Pin Arrangement HM62W8511HJPI Series A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CS 6 31 OE I/O1 7 30 I/O8 I/O2 8


    Original     		PDF HM62W8511HI HM62W8511HJPI-15 400-mil 36-pin CP-36D) HM62W8511HJPI

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283 (Z) Preliminary Rev. 0.0 Jul. 13, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high


    Original     		PDF HM62W8511HCI 512-kword ADE-203-1283 400-mil 36-pin HM62W8511HCJPI-12 Hitachi DSAUTAZ006

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HM62W8511H Series Package Dimensions HM62W8511HJP/HLJP Series CP-36D Unit: mm 23.25 23.62 Max 10.16 ± 0.13 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 0.80 +0.25 –0.17 1.30 Max 2.85 ± 0.12


    Original     		PDF HM62W8511H HM62W8511HJP/HLJP CP-36D) CP-36D Hitachi DSAUTAZ005

    Untitled

    Abstract: No abstract text available
    Text: HM62W8511HCI Series Pin Arrangement 36-pin SOJ A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 6 31 I/O1 7 30 I/O8 I/O2 8 29 I/O7 VCC 9 28 VSS VSS 10 27 VCC I/O3 11 26 I/O6 I/O4 12 25 I/O5 13 24 A14 A5 14 23 A13 A6 15 22 A12 A7 16 21 A11 A8 17 20


    Original     		PDF HM62W8511HCI 36-pin

    HM62W8511H

    Abstract: HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00189
    Text: HM62W8511H シリーズ 4M High Speed SRAM 512-kword x 8-bit ADJ-203-268B (Z) ’98. 9. 15 Rev. 1.0 概要 HM6 2W 85 11 H シリーズは 51 2k ワード×8 ビット構成の 4M ビット高速スタティック RAM です。CMOS （4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実


    Original     		PDF HM62W8511H 512-kword ADJ-203-268B 400-mil 150/130mA 60/50mA HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511H HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00189

    HM62W8511HCJPI

    Abstract: HM62W8511HCJPI-12 DSA003633
    Text: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283A (Z) Rev. 1.0 Nov. 9, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W8511HCI 512-kword ADE-203-1283A 400-mil 36-pin D-85622 D-85619 HM62W8511HCJPI HM62W8511HCJPI-12 DSA003633

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201A (Z) Preliminary Rev. 0.1 Jul. 13, 2001 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W8511HC 512-kword ADE-203-1201A 400-mil 36-pin HM62W8511HCJP-10 Hitachi DSAUTAZ006

    Untitled

    Abstract: No abstract text available
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-750B (Z) Preliminary Rev. 0.2 Dec. 5, 1997 Description The HM62W8511H is an asyncronous high speed static RAM organized as 512-kword × 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process (4-transistor + 2-poly resistor


    Original     		PDF HM62W8511H 512-kword ADE-203-750B 400-mil 36-pin

    Hitachi DSAUTAZ005

    Abstract: CP-36D
    Text: HM62W8511HI Series Package Dimensions HM62W8511HJPI Series CP-36D Unit: mm 23.25 23.62 Max 10.16 ± 0.13 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 0.80 +0.25 –0.17 1.30 Max 2.85 ± 0.12 18 0.74


    Original     		PDF HM62W8511HI HM62W8511HJPI CP-36D) CP-36D Hitachi DSAUTAZ005

    HM62W8511H

    Abstract: HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA0044
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-750D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W8511H 512-kword ADE-203-750D 400-mil 36-pin HM62W8511H-10 HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA0044

    HM62W8511HC

    Abstract: HM62W8511HCJP-10 HM62W8511HCJP-12 HM62W8511HCLJP-10 HM62W8511HCLJP-12 Hitachi DSA00316
    Text: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201C (Z) Rev. 2.0 Nov. 9, 2001 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W8511HC 512-kword ADE-203-1201C 400-mil 36-pin D-85622 D-85619 HM62W8511HCJP-10 HM62W8511HCJP-12 HM62W8511HCLJP-10 HM62W8511HCLJP-12 Hitachi DSA00316

    HM62W8511H

    Abstract: HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00200
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-750D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		PDF HM62W8511H 512-kword ADE-203-750D 400-mil 36-pin HM62W8511H-10 HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00200

    Hitachi DSA00176

    Abstract: No abstract text available
    Text: HM62W8511HI シリーズ 4M High Speed SRAM 512-kword x 8-bit ADJ-203-428A (Z) ’99. 4. 15 Rev. 1.0 概要 HM6 2W 85 11 HI シリーズは 5 12 k ワード×8 ビット構成の 4 M ビット高速スタティック RA M です。CMO S （4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実


    Original     		PDF HM62W8511HI 512-kword ADJ-203-428A 400-mil 130mA HM62W8511HJPI-15 36-pin CP-36D) Hitachi DSA00176

    HM62W8511HC

    Abstract: HM62W8511HCJP-10 HM62W8511HCLJP-10 Hitachi DSA00358
    Text: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM62W8511HC 512-kword ADE-203-1201 400-mil 36-pin Equal2100 HM62W8511HCJP-10 HM62W8511HCLJP-10 Hitachi DSA00358

    HM62W8511H

    Abstract: No abstract text available
    Text: HM62W8511H Series Pin Description Pin name Function A0 to A18 Address input I/O1 to I/O8 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Block Diagram LSB A1 A17 A7 A11 A16 A2 A6 A5 (MSB) VCC


    Original     		PDF HM62W8511H

    Untitled

    Abstract: No abstract text available
    Text: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing


    OCR Scan     		PDF 524288-word ADE-203-750 HM62W8511H 512-kword 400-mil 36-pin ns/12 ns/15 GD34GÃ

    Untitled

    Abstract: No abstract text available
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-750D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    OCR Scan     		PDF HM62W8511H 512-kword ADE-203-750D 400-mil 36-pin 8511H-10

    Untitled

    Abstract: No abstract text available
    Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-750A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W8511H is an asynchronous high speed static RAM organized as 512-kword X 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed


    OCR Scan     		PDF HM62W8511H 512-kword ADE-203-750A 400-mil 36-pin ns/12 ns/15

    ZUA12

    Abstract: ZUA13
    Text: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27, 1997 Description The HM62W8511H is an asyncronous high speed static RAM organized as 5 12-kwordx 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 |im CMOS process and high speed circuit


    OCR Scan     		PDF HM62W8511H 524288-word ADE-203-750 12-kwordx 400-mil 36-pin ns/15 D-85622 ZUA12 ZUA13

    Untitled

    Abstract: No abstract text available
    Text: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-M bit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    OCR Scan     		PDF HM62W8511HI 512-kword ADE-203-1036A 400mil 36-pin