HN3C09F Search Results
HN3C09F Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| HN3C09F |
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NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Scan | 91.44KB | 1 | |||
| HN3C09F |
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Transistor Silicon NPN Epitaxial Planar Type | Scan | 985.43KB | 1 | |||
| HN3C09FU |
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Transistor Silicon NPN Epitaxial Planar Type | Scan | 1MB | 1 | |||
| HN3C09FU |
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NPN Multi-Chip Composite Transistor Pair | Scan | 119.45KB | 2 | |||
| HN3C09FU(TE85L) |
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TRANS GP BJT NPN 12V 0.03A 6(2-2J1A) T/R | Scan | 1MB | 1 |
HN3C09F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HN3C09FUContextual Info: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
HN3C09FU HN3C09FU | |
HN3C09FUContextual Info: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING |
OCR Scan |
HN3C09FU N3C09FU HN3C09FU | |
HN3C09FContextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO |
OCR Scan |
HN3C09F N3C09F HN3C09F | |
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Contextual Info: TOSHIBA HN3C09FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
HN3C09FU | |
marking ti
Abstract: marking .TI
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OCR Scan |
HN3C09FU marking ti marking .TI | |
transistor marking c3nContextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage |
OCR Scan |
HN3C09F N3C09F transistor marking c3n | |
HN3C09FContextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO |
OCR Scan |
HN3C09F N3C09F HN3C09F | |
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Contextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC |
OCR Scan |
HN3C09F | |
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Contextual Info: TO SHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC |
OCR Scan |
HN3C09F | |
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Contextual Info: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage |
OCR Scan |
HN3C09FU |