HN4K03JU Search Results

Contextual Info: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Absolute Maximum Ratings Ta = 25°C (Q1, Q2 Common)

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit: mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5 to 1.5V z Excellent switching times z Small package

HN4K03JU

Contextual Info: HN4K03JU 東芝電界効果トランジスタ シリコンNチャネルMOS形 HN4K03JU ○ 高速スイッチング用 ○ アナログスイッチング用 単位: mm z 入力インピーダンスが高く駆動電流が極めて小さい。 z Vth が低く、低電圧での CMOS などからの直接駆動が可能。

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Maximum Ratings Ta = 25°°C (Q1, Q2 Common)

HN4K03JU

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5~1.5V z Excellent switching times z Small package

HN4K03JU

Abstract: S-25
Contextual Info: TOSHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package

Contextual Info: TO SHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N d K n 3 I II • ■ m 'm m m% w v v HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS • High Input Impedance. • Low Gâte Threshold Voltage : • Excellent Switching Times

HN4K03JU

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5~1.5V z Excellent switching times z Small package

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Maximum Ratings Ta = 25°C (Q1, Q2 Common)

HN4K03JU

Contextual Info: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm l High input impedance l Low gate threshold voltage: Vth = 0.5~1.5V l Excellent switching times l Small package

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

8aa1

Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
Contextual Info: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Contextual Info: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3