HWF1686YC Search Results

HWF1686YC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HWF1686YC		Hexawave	5.4 W L-band power FET via hole chip	Original	PDF	100.71KB	3
HWF1686YC		Hexawave	L-Band Power FET Via Hole Chip	Original	PDF	53.06KB	3

HWF1686YC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
57130 Abstract: 5935-0 Contextual Info: HWF1686YC HSXAWAVS Medium Power GaAs FET September Features 1998 Rev. B O utput Power PidB=30dBm typ. @2.4GHz Outline Drawing High Gain G l= 16dB(typ.)@2.4GHz High Efficiency Unit : £ gn Thickness: 53 \ High Linearity All Bond Pads: r\|add =45%(typ.)@2.4GHz	OCR Scan	HWF1686YC 30dBm 45dBm HWF1686YC 57130 5935-0	PDF
Contextual Info: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,	Original	HWF1686YC 123456789ABC7DEF7 30dBm 45dBm	PDF
4532 fet Abstract: HWF1686YC Contextual Info: HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 Features Outline Dimensions Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) 650 Description Designed for various RF and Microwave applications,	Original	HWF1686YC 30dBm 45dBm 4532 fet HWF1686YC	PDF

Catalog Datasheet

Type

Document Tags

PDF

57130

Abstract: 5935-0
Contextual Info: HWF1686YC HSXAWAVS Medium Power GaAs FET September Features 1998 Rev. B O utput Power PidB=30dBm typ. @2.4GHz Outline Drawing High Gain G l= 16dB(typ.)@2.4GHz High Efficiency Unit : £ gn Thickness: 53 \ High Linearity All Bond Pads: r|add =45%(typ.)@2.4GHz

OCR Scan

HWF1686YC 30dBm 45dBm HWF1686YC 57130 5935-0

PDF

Contextual Info: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,

Original

HWF1686YC 123456789ABC7DEF7 30dBm 45dBm

PDF

4532 fet

Abstract: HWF1686YC
Contextual Info: HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 Features Outline Dimensions Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) 650 Description Designed for various RF and Microwave applications,

Original

HWF1686YC 30dBm 45dBm 4532 fet HWF1686YC

PDF