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    HY51V16404B Search Results

    HY51V16404B Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51V16404BJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BJ80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF

    HY51V16404B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A804B K-Series Unbuffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A804B K-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM module consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed


    Original     		HYM5V72A804B 8Mx72 8Mx72-bit HY51V16404B HYM5V72A804BTKG 168-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5V64404B K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original     		HYM5V64404B 4Mx64 4Mx64-bit HY51V16404B HYM5V64404BKG/BTKG 168-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A404B N-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A404B N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V16404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168


    Original     		HYM5V72A404B 4Mx72 4Mx72-bit HY51V16404B 16-bit HYM5V72A404BNG/BTNG 168-Pin PDF

    HY51V17404B

    Abstract: 4mx4
    Text: HY51V17404B,HY51V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		HY51V17404B HY51V16404B 4mx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A404B K-Series Unbuffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A404B K-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V16404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original     		HYM5V72A404B 4Mx72 4Mx72-bit HY51V16404B HYM5V72A404BKG/BTKG 168-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A804B N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A804B N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM module consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin


    Original     		HYM5V72A804B 8Mx72 8Mx72-bit HY51V16404B 16-bit HYM5V72A804BTNG 168-Pin PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I • HYM5V72A804B K-Series Unbuffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM 5V72A804B K-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM m odule consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed


    OCR Scan     		HYM5V72A804B 8Mx72 5V72A804B 8Mx72-bit HY51V16404B HYM5V72A804BTKG 168-Pin 2SU25) Ci79-f PDF

    DG37

    Abstract: No abstract text available
    Text: -H Y U H D A I • HYM5V72A804B N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM 5V72A804B N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM m odule consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSO P on a 168 pin


    OCR Scan     		HYM5V72A804B 8Mx72 5V72A804B 8Mx72-bit HY51V16404B 16-bit 5V72A804BTNG 168-Pin 250f6 DG37 PDF

    HY51V16404B

    Abstract: HY51V16404BR60 si17 MH-750
    Text: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION HY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY51V16404B TheHY51V16404B 1AD51 -10-MAY95 4b75Dflfl HY51V16404BJ HY51V16404BSLJ HY51V16404BR60 si17 MH-750 PDF

    hyundai hy 214

    Abstract: UL-96 SH17 wl33
    Text: • HYUNDAI HY51V17404B, HY51V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode


    OCR Scan     		HY51V17404B, HY51V16404B HY51V17404BJ HY51V17404BSLJ HY51V17404BT HY51V17404BSLT HY51V16404BJ HY51V16404BSLJ HY51V16404BT HY51V16404BSLT hyundai hy 214 UL-96 SH17 wl33 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY51V16404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V16404B is the new generation and fa st dynam ic RAM organized4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY51V16404B HY51V16404B 4b75Gflfl 1AD51-10-MAY95 HY51V16404BJ HY51V16404BSLJ HY51V16404BT PDF

    HY51V16404B

    Abstract: WP4L CA3C1
    Text: 1 YUNDAI 4 M x 4 _bjt HY51V16404B Series CMos DRAM with Extended Data Out D E S C R IP T IO N The HY51V16404B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY51V16404B 1AD51-104IAY95 HY51V16404BJ HY51V16404BSLJ HY51V16404BT HY51V16404BSLT WP4L CA3C1 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ PDF

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		HY51V17404B V16404B A0-A11) PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF