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Catalog Datasheet	Type	Document Tags	PDF
DC chopper Abstract: 1DI75E-100 1DI75E-055 1di75 SE 265 Contextual Info: /\°7 —7“V W 7 / Power Devices JfcÉP üf^i 600V?^3. 600 volts class power transistor modules for DC chopper m se Device type VcBO Volts 1DI75E-055 1D I200E -055 1D I200K -055 600 600 600 Vceo feus V o te 550 550 550 Ic Cont. Amps. 75 200 200 Pc Watts	OCR Scan	1DI75E-055 I200E I200K 1DI75E-100 I75F-100 Am100 1DI75F-100 DC chopper 1di75 SE 265	PDF
Contextual Info: H Y C 5 3 6 4 1 0 • • H Y U N D A I S e r i e s 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in	OCR Scan	4Mx36 HYC536410 HY5117400ASLTand HY5141OOALT x36/18 50fla 1MC04-01-FEB95 0004DSB HYC536410-Series	PDF

Catalog Datasheet

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DC chopper

Abstract: 1DI75E-100 1DI75E-055 1di75 SE 265
Contextual Info: /\°7 —7“V W 7 / Power Devices JfcÉP üf^i 600V?^3. 600 volts class power transistor modules for DC chopper m se Device type VcBO Volts 1DI75E-055 1D I200E -055 1D I200K -055 600 600 600 Vceo feus V o te 550 550 550 Ic Cont. Amps. 75 200 200 Pc Watts

OCR Scan

1DI75E-055 I200E I200K 1DI75E-100 I75F-100 Am100 1DI75F-100 DC chopper 1di75 SE 265

PDF

Contextual Info: H Y C 5 3 6 4 1 0 • • H Y U N D A I S e r i e s 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in

OCR Scan

4Mx36 HYC536410 HY5117400ASLTand HY5141OOALT x36/18 50fla 1MC04-01-FEB95 0004DSB HYC536410-Series

PDF