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I27279 Datasheets Context Search
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Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft |
Original |
I27279 GB10XF120K | |
93646Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft |
Original |
I27279 GB10XF120K E78996 12-Mar-07 93646 |