e24526
Abstract: IBM0316169C IBM0316809C
Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM
|
Original
|
PDF
|
IBM0316409C
IBM0316169C
IBM0316809C
IBM13Q4739CC
200-Pin
e24526
|
E24526
Abstract: IBM0316169C IBM0316809C
Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q8739CC 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8-Byte Dual In-Line Memory Module • 8M x 72 Synchronous DRAM DIMM
|
Original
|
PDF
|
IBM0316409C
IBM0316169C
IBM0316809C
IBM13Q8739CC
200-Pin
E24526
|
IBM0316169C
Abstract: IBM0316809C ibm t20
Text: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8
|
Original
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
cycles/64ms
SA14-4711-03
IBM0316169C
IBM0316809C
ibm t20
|
IBM0316809CT3D80
Abstract: IBM0316169C IBM0316809C
Text: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100
|
Original
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
IBM03164B9C
cycles/64ms
IBM0316809CT3D80
IBM0316169C
IBM0316809C
|
IBM0316809C
Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8
|
Original
|
PDF
|
IBM0316169C
IBM0316409C
IBM0316809C
cycles/64ms
IBM0316809C
ibm T22
cmos dram
T20 96 diode
|
ibm T22
Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3
|
Original
|
PDF
|
IBM0316409C
IBM0316169C
IBM0316809C
IBM0316809C
IBM0316169C
16Mbit
ibm T22
22TCK
SDRAM 1996
|
PXB 4325
Abstract: ram 6164 IC Ensemble AA23 Hyb 4116 motorola analog ICs vol.2 P-BGA-352-1 epd driver ic ABM atm buffer manager PXB4325E
Text: ICs for Communications ATM Buffer Manager ABM PXB 4330 Version 1.1 Data Sheet 09.99 DS 1 PXB 4330 Data Sheet Revision History: Current Version: 09.99 Previous Version: Preliminary Data Sheet 08.98 V 1.1 Page Page (in previous (in current Version) Version)
|
Original
|
PDF
|
|
64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16Mb S ynchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 : -12 : CL=3 ; CL=3 Units ; MHz : fcK Clock Frequency : io o I 83 tcK Clock Cycle ; 10 Uc Clock Access Tim e Ì • Automatic and Controlled Precharge Command
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
|
Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
IBM03164B9C
|
Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
cycles/64ms
|
Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
cycles/64ms
07H3997
0003Sb0
|
UC07H
Abstract: fccd 111a
Text: IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option I I -10 CL=3 fc K ! Clock Frequency 1 1 0 0 tcK ! Clock Cycle I 10 tftc ! Clock Access Time I 8 i -12 CL=3 Units • Automatic and Controlled Precharge Command
|
OCR Scan
|
PDF
|
IBM0316169C
IBM0316409C
IBM0316809C
cycles/64ms
UC07H
fccd 111a
|
5285-04
Abstract: No abstract text available
Text: I =¥= =•= IBM0316409C IBM0316809C IBM0316169C IBM03164B9C P relim inary -80,-322 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: i I fcK ! Clock Frequency -80 CL=3
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
IBM03164B9C
cycles/64ms
5285-04
|
|
Untitled
Abstract: No abstract text available
Text: IBM0316169C Advance 1M x 16 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CAS latency = 3 -10 Clock Frequency' -11 -12 -13 < 100MHz <91 MHz <83MHz <77 MHz Clock Cycle 10ns 11ns 12ns 13ns Access Time from the Clock
|
OCR Scan
|
PDF
|
IBM0316169C
100MHz
83MHz
400mil)
16bits
cycles/64ms
RAS18
0-A10
|
Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91 83 77
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
16Mbit
cycles/64ms
07H3997
|
2TNC
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command 100 91 83 77 MHz • Data Mask for Read/Write control x4,x8
|
OCR Scan
|
PDF
|
IBM0316409C
IBM0316809C
IBM0316169C
16Mbit
cycles/64ms
2TNC
|
031-6169
Abstract: No abstract text available
Text: I = = = ¥ = IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z - y=0,B z=C,P,D,Q Preliminary
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features
|
OCR Scan
|
PDF
|
IBM014400.
IBM014400P.
IBM014400M
IBM014400B.
IBM014405.
IBM014405P.
IBM0316809C.
IBM0316169C.
|
Untitled
Abstract: No abstract text available
Text: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70
|
OCR Scan
|
PDF
|
08J3348
|
Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications ATM Buffer Manager ABM PXB 4330 E Version 1.1 Preliminary Data Sheet 08.98 DS 2 PXB 4330 E Revision History: Current Version: 08.98 P revious Version: P relim inary Data S heet 05.98 DS1 Page in previous V ersion Page (in current
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70
|
OCR Scan
|
PDF
|
08J3348
03164y9z
03168y9z
IBM0316169z
400mil;
|
marking w25 SMD
Abstract: w6856 siemens k24 siemens k25 marking g23 SMD MARKING CODE SMD JW smd marking K23 SMD MARKING CODE abr SMD MARKING CODE g23 smd marking g24
Text: S IE M E N S ICs for Communications ATM Buffer Manager ABM PXB 4330 E Version 1.1 Preliminary Data Sheet 08.98 DS 2 This Material Copyrighted By Its Respective Manufacturer PXB 4330 E Revision History: Current Version: 08.98 P revious V ersion: P relim inary Data S heet 05.98 DS1
|
OCR Scan
|
PDF
|
|
0316169CT3D
Abstract: 0316809CT3D cb 10 b 60 kd
Text: I = = = = = = — = *= IB M 0 3 1 6 4 0 9 C P r e l i m i n a r y 1 M x 1 6 , -80; - 3 6 0 IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C 16M b S y n c h r o n o u s D R A M -D ie Revision D Features • Multiple Burst Read with Single Write Option
|
OCR Scan
|
PDF
|
|