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    Text: ICE35N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 35A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE35N60W 250uA 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02