IGN2735M250 Search Results
IGN2735M250 Datasheets Context Search
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Contextual Info: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET High Power Gain Excellent thermal stability Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for |
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IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A |