IPB04CN10N Search Results
IPB04CN10N Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB04CN10N G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original |
IPB04CN10N Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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04CN10N
Abstract: IEC61249-2-21 JESD22 PG-TO220-3
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IPB04CN10N IPI04CN10N IPP04CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 04CN10N IEC61249-2-21 JESD22 PG-TO220-3 | |
Untitled
Abstract: No abstract text available
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IPB04CN10N IPI04CN10N IPP04CN10N 492C86à E2C86Eà | |
marking 6d
Abstract: IPP04CN10N G diode 6e
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IPB04CN10N IPI04CN10N IPP04CN10N marking 6d IPP04CN10N G diode 6e | |
S 170 MOSFET TRANSISTOR
Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
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B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book |