IPB50N10S3L-16 Search Results
IPB50N10S3L-16 Price and Stock
Infineon Technologies AG IPB50N10S3L16ATMA2MOSFET N-CH 100V 70A TO263-3 |
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IPB50N10S3L16ATMA2 | Reel | 1,000 |
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IPB50N10S3L16ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB50N10S3L16ATMA2 |
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IPB50N10S3L16ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB50N10S3L16ATMA1MOSFET N-CH 100V 50A TO263-3 |
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IPB50N10S3L16ATMA1 | Cut Tape | 1 |
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IPB50N10S3L16ATMA1 | 1,570 | 295 |
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IPB50N10S3L16ATMA1 | 3,112 | 1 |
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IPB50N10S3L16ATMA1 | 24,400 |
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Infineon Technologies AG IPB50N10S3L-16MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB50N10S3L-16 | 310 |
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IPB50N10S3L-16 | 95 |
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IPB50N10S3L-16 | 76 |
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IPB50N10S3L-16 | 12 |
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IPB50N10S3L-16 | 24,400 |
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Infineon Technologies AG IPB50N10S3L16OPTIMOS-T POWER-TRANSISTOR Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB50N10S3L16 | 5,700 |
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IPB50N10S3L-16 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB50N10S3L-16 |
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Single: N-Channel 100V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.4 mOhm; ID (max): 70.0 A; RthJC (max): 1.5 K/W; | Original | |||
IPB50N10S3L16ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 50A TO263-3 | Original | |||
IPB50N10S3L16ATMA2 |
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MOSFET N-CH 100V 70A TO263-3 | Original |