| IPD30N06S2-23 |
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Infineon Technologies
|
Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 23.0 mOhm; ID (max): 30.0 A; RthJC (max): 1.5 K/W; |
Original |
PDF
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150.75KB |
8 |
| IPD30N06S223ATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 |
Original |
PDF
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146.82KB |
|
| IPD30N06S223ATMA2 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 |
Original |
PDF
|
151.67KB |
|
