IPP200N25N3 Search Results
IPP200N25N3 Price and Stock
Infineon Technologies AG IPP200N25N3GXKSA1MOSFET N-CH 250V 64A TO220-3 |
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IPP200N25N3GXKSA1 | Tube | 5,236 | 1 |
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IPP200N25N3GXKSA1 | Tube | 246 | 16 Weeks | 50 |
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IPP200N25N3GXKSA1 | 611 |
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IPP200N25N3GXKSA1 | 740,000 | 500 |
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IPP200N25N3GXKSA1 | 2,175 | 16 Weeks | 1 |
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IPP200N25N3GXKSA1 | Bulk | 1,581 | 1 |
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IPP200N25N3GXKSA1 | 1 |
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IPP200N25N3GXKSA1 | Tube | 900 | 50 |
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IPP200N25N3GXKSA1 | Tube | 1,302 | 0 Weeks, 1 Days | 1 |
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IPP200N25N3GXKSA1 | 17 Weeks | 500 |
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IPP200N25N3GXKSA1 | 928 |
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IPP200N25N3GXKSA1 | 25,741 |
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Infineon Technologies AG IPP200N25N3 GMOSFETs N-Ch 250V 64A TO220-3 OptiMOS 3 |
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IPP200N25N3 G | 2,219 |
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Infineon Technologies AG IPP200N25N3GTrans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 Tube |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP200N25N3G | 3,970 | 9 |
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IPP200N25N3G | 80 |
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IPP200N25N3G | 25,000 |
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Infineon Technologies AG IPP200N25N3MOSFET N-CH 250V 64A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP200N25N3 | 26,435 |
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IPP200N25N3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IPP200N25N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 250.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 64.0 A; | Original | 428.51KB | 11 | |||
IPP200N25N3GXKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 64A TO220-3 | Original | 702.39KB |
IPP200N25N3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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200N25N
Abstract: IEC61249-2-21 IPP200N25N3 JESD22 PG-TO220-3 IPB200N25N3
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IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N IEC61249-2-21 JESD22 PG-TO220-3 | |
200N25NContextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature |
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IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 200N25N PG-TO220-3 200N25N | |
200N25N
Abstract: IPB200N25N3 IPP200N25N3 IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N
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IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N | |
IPP200N25N3
Abstract: 200N25N
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IPB200N25N3 IPP200N25N3 IPI200N25N3 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N | |
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 20 mW ID 64 A • 175 °C operating temperature |
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IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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