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Infineon Technologies AG IRF5210L MOSFET P-CH 100V 40A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5210L	Tube			200	1 - 10 - 100 - 1000 $2.2357 10000 $2.2357	Buy Now
Infineon Technologies AG AUIRF5210S MOSFET P-CH 100V 38A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRF5210S	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	AUIRF5210S		10		1	1 - 10 - 100 $1.79 1000 $1.6 10000 $1.5	Buy Now
EBV Elektronik	AUIRF5210S			143 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRF5210LPBF MOSFET P-CH 100V 38A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5210LPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IRF5210LPBF	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IRF5210LPBF	Bulk			5	1 - 10 $2.64 100 $2.51 1000 $2.25 10000 $2.25	Get Quote
EBV Elektronik	IRF5210LPBF			143 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRF5210STRR MOSFET P-CH 100V 40A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5210STRR	Reel			800	1 - 10 - 100 - 1000 $2.31125 10000 $2.31125	Buy Now
Infineon Technologies AG IRF5210SPBF MOSFET P-CH 100V 38A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5210SPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IRF5210SPBF			143 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IRF5210SPBF		26,520			1 - 10 - 100 $0.5597 1000 $0.4333 10000 $0.4333	Buy Now

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IRF5210 Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRF5210	International Rectifier	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)	Original	PDF	129.52KB	8
IRF5210	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF5210 with Standard Packaging	Original	PDF	133.72KB	9
IRF5210	Semelab	Transistor - Datasheet Reference	Original	PDF	25.41KB	2
IRF5210	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRF5210	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -100V, -35A, Pkg Style TO-220AB	Scan	PDF	50.01KB	1
IRF5210L	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF5210L with Standard Packaging	Original	PDF	201.76KB	11
IRF5210L	International Rectifier	HEXFET Power MOSFET	Original	PDF	197.56KB	10
IRF5210LPBF	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF5210L with Lead Free Packaging	Original	PDF	201.76KB	11
IRF5210LPBF	International Rectifier		Original	PDF	197.56KB	10
IRF5210PBF	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF5210 with Lead Free Packaging	Original	PDF	133.72KB	9
IRF5210PBF	International Rectifier		Original	PDF	129.53KB	8
IRF5210S	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Standard Packaging	Original	PDF	201.76KB	11
IRF5210S	International Rectifier	HEXFET Power MOSFET	Original	PDF	197.56KB	10
IRF5210S	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

IRF5210SPBF	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging	Original	PDF	201.76KB	11
IRF5210SPBF	International Rectifier		Original	PDF	197.56KB	10
IRF5210STRL	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package	Original	PDF	197.55KB	10
IRF5210STRL	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Left Packaging	Original	PDF	201.76KB	11
IRF5210STRLPBF	International Rectifier	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK	Original	PDF		10
IRF5210STRLPBF	International Rectifier	-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging shipped on Tape and Reel Left	Original	PDF	201.76KB	11

IRF5210 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all	Original	IRF5210 O-220AB -100V O-220	PDF
IRF5210 Abstract: SHD230452 Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE	Original	SHD230452 IRF5210 -250mA IRF5210 SHD230452	PDF
IRF5210 Contextual Info: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )	Original	IRF5210 00A/ms 300ms, IRF5210	PDF
IRF5210 Abstract: IRF5210S 1405B Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated	Original	1405B IRF5210S -100V IRF5210 IRF5210S 1405B	PDF
irf5210s Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s	PDF
IRF5210 Abstract: SHD225452 Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.07 Ohm, -34A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 Add an “S” to the end of the part number for S-100 screening, SHD225452S	Original	SHD225452 IRF5210 S-100 SHD225452S SHDC225452 IRF5210 SHD225452	PDF
IRF5210 Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A	Original	IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210	PDF
IRF5210L Abstract: IRF5210S Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S	Original	IRF5210S 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L	PDF
1Actc Contextual Info: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q	OCR Scan	IRF5210 O-220 1Actc	PDF
IRF5210L Abstract: IRF5210S Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω	Original	91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S	PDF
IRF7205 Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY	OCR Scan	BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240	PDF
Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
IRF5210L Abstract: IRF5210S Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω	Original	91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S	PDF
IRF5210 Abstract: shd230452 Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE	Original	SHD230452 IRF5210 SHD230452 030Typ LCC-28T IRF5210	PDF

IRF5210PBF Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A	Original	IRF5210PbF -100V O-220 O-220AB IRF5210PBF	PDF
IRF5210PBF Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A	Original	IRF5210PbF -100V O-220 O-220AB IRF5210PBF	PDF
irf5210s Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s	PDF
IRF5210 Abstract: 91434A Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description	Original	1434A IRF5210 -100V O-220 IRF5210 91434A	PDF
shd225452 Abstract: IRF52 Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.07 Ohm, -34A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 Add an “S” to the end of the part number for S-100 screening, SHD225452S	Original	SHD225452 IRF5210 S-100 SHD225452S SHDC225452 SHD225452 O-254 IRF52	PDF
IRF5210 Abstract: irf1010 applications IRF1010 Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated	Original	IRF5210 -100V IRF5210 irf1010 applications IRF1010	PDF
IRF5210PBF Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A	Original	IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210PBF	PDF
Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
Contextual Info: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
IRF5210 Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description	Original	1434A IRF5210 -100V O-220 IRF5210	PDF

IRF5210 Search Results

IRF5210 Price and Stock

Infineon Technologies AG IRF5210L

Infineon Technologies AG AUIRF5210S

Infineon Technologies AG IRF5210LPBF

Infineon Technologies AG IRF5210STRR

Infineon Technologies AG IRF5210SPBF

IRF5210 Datasheets (23)

IRF5210 Datasheets Context Search

IRF5210

IRF5210

IRF5210

irf5210s

IRF5210

IRF5210

IRF5210L

1Actc

IRF5210L

IRF7205

IRF5210L

IRF5210

IRF5210PBF

IRF5210PBF

irf5210s

IRF5210

shd225452

IRF5210

IRF5210PBF

IRF5210