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    IRF530N Price and Stock

    Infineon Technologies AG IRF530NPBF

    MOSFET N-CH 100V 17A TO220AB
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    DigiKey IRF530NPBF Tube 22,048 1
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    Avnet Americas () IRF530NPBF Bulk 17 Weeks, 5 Days 1
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    IRF530NPBF Tube 18 Weeks 1
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    Mouser Electronics IRF530NPBF 8,274
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    Verical () IRF530NPBF 62,027 23
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    IRF530NPBF 3,815 20
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    IRF530NPBF 1,496 128
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    Arrow Electronics () IRF530NPBF 62,027 1
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    IRF530NPBF 29,924 18 Weeks 1
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    IRF530NPBF 3,815 18 Weeks 1
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    Newark () IRF530NPBF Bulk 8,355 1
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    IRF530NPBF Bulk 1
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    Quest Components IRF530NPBF 196
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    TME IRF530NPBF 1
    • 1 $0.789
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    Ameya Holding Limited IRF530NPBF 48
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    Rutronik IRF530NPBF Tube 45,850 50
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    Chip One Stop IRF530NPBF Tube 1,496 0 Weeks, 1 Days 5
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    EBV Elektronik IRF530NPBF 10,000 19 Weeks 1,000
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    New Advantage Corporation IRF530NPBF 8,000 1
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    Win Source Electronics IRF530NPBF 43,640
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    Infineon Technologies AG IRF530NSTRLPBF

    MOSFET N-CH 100V 17A D2PAK
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    DigiKey () IRF530NSTRLPBF Cut Tape 4,477 1
    • 1 $1.26
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    IRF530NSTRLPBF Digi-Reel 4,477 1
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    IRF530NSTRLPBF Ammo Pack 111 Weeks 1
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    IRF530NSTRLPBF Reel 10 Weeks 1,600
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    Mouser Electronics IRF530NSTRLPBF 13,132
    • 1 $1.22
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    Verical () IRF530NSTRLPBF 12,800 800
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    IRF530NSTRLPBF 9,219 75
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    IRF530NSTRLPBF 1,400 88
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    Arrow Electronics () IRF530NSTRLPBF 12,800 10 Weeks 800
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    Newark IRF530NSTRLPBF Cut Tape 10 1
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    TME IRF530NSTRLPBF 810 1
    • 1 $1.243
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    Ameya Holding Limited IRF530NSTRLPBF 1,388
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    Rutronik IRF530NSTRLPBF Reel 1,600 800
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    Chip One Stop IRF530NSTRLPBF Cut Tape 9,219 0 Weeks, 1 Days 1
    • 1 $1.25
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    EBV Elektronik IRF530NSTRLPBF 64,000 11 Weeks 800
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    New Advantage Corporation IRF530NSTRLPBF 51,200 1
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    Win Source Electronics IRF530NSTRLPBF 20,560
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    Infineon Technologies AG IRF530NS

    MOSFET N-CH 100V 17A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF530NS Tube 50
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    Infineon Technologies AG IRF530NL

    MOSFET N-CH 100V 17A TO262
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    DigiKey IRF530NL Tube
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    Infineon Technologies AG IRF530NSPBF

    MOSFET N-CH 100V 17A D2PAK
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    Velocity Electronics IRF530NSPBF 400
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    EBV Elektronik IRF530NSPBF 143 Weeks 50
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    IRF530N Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IRF530N
    International Rectifier HEXFET Power MOSFET Original PDF 134.73KB 8
    IRF530N
    International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF530N with Standard Packaging Original PDF 224.18KB 9
    IRF530N
    International Rectifier Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) Original PDF 219.98KB 8
    IRF530N
    International Rectifier HEXFET Power MOSFET Original PDF 194.98KB 8
    IRF530N
    Intersil 22A, 100V, 0.064 ?, N-Channel Power MOSFET Original PDF 127.44KB 10
    IRF530N
    Philips Semiconductors N-Channel TrenchMOS Transistor Original PDF 97.65KB 7
    IRF530N
    STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF 47.29KB 6
    IRF530N
    STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF 182.41KB 9
    IRF530N
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF530N
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 15A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRF530N
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.91KB 1
    IRF530N_R4942
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 22A TO-220AB Original PDF 134.34KB
    IRF530N,127
    Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 17A TO220AB Original PDF 7
    IRF530ND
    General Semiconductor N-Channel Enhancement-Mode MOSFET DIE Original PDF 102.17KB 5
    IRF530NL
    International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF530NL with Standard Packaging Original PDF 623.77KB 11
    IRF530NL
    International Rectifier HEXFET Power MOSFET Original PDF 619.61KB 10
    IRF530NL
    International Rectifier HEXFET Power Mosfet Original PDF 188.94KB 10
    IRF530NL
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.91KB 1
    IRF530NLPBF
    International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF530NL with Lead Free Packaging Original PDF 623.77KB 11
    IRF530NLPBF
    International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF 619.59KB 10

    IRF530N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN-994

    Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
    Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original
    91352B IRF530NS IRF530NL EIA-418. AN-994 IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: 4.5v to 100v input regulator
    Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF530N O-220 O-220AB IRF530N 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334
    Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original
    IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334 PDF

    IRF530N

    Abstract: 4.5V TO 100V INPUT REGULATOR
    Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF530N O-220 IRF530N 4.5V TO 100V INPUT REGULATOR PDF

    Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì


    OCR Scan
    IRF530NS) IRF530NL) PD-91352A IRF530NS/L PDF

    Contextual Info: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating


    Original
    IRF530NS IRF530NL IRF530NL) EIA-418. PDF

    IRF530N

    Abstract: IRF530N applications
    Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ


    Original
    IRF530N O220AB) IRF530N IRF530N applications PDF

    Contextual Info: PD - 94962 IRF530NPbF HEXFETÆ Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 90m" G ID = 17A S Description


    Original
    IRF530NPbF O-220 PDF

    Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"


    Original
    IRF530NSPbF IRF530NLPbF EIA-418. PDF

    Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original
    91352B IRF530NS IRF530NL EIA-418. PDF

    IRF530N

    Abstract: IRF530ND
    Contextual Info: IRF530ND N-Channel Enhancement-Mode MOSFET DIE TM Chip Geometry T E F N E G VDS 100V RDS ON 0.11Ω ID 17A ct u d ro P New D Source Gate G Physical Characteristics • Die size : 3890 X 1880 µm (153.1 X 74.0 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag


    Original
    IRF530ND IRF530N IRF530ND PDF

    Contextual Info: IRF530NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original
    IRF530NPbF O-220AB O-220AB. PDF

    AN-994

    Abstract: IRF530N IRF530NL IRF530NS
    Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology


    Original
    IRF530NS 1352A IRF530NS/L IRF530NS) IRF530NL) AN-994 IRF530N IRF530NL PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original
    O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Contextual Info: IRF530N N-Channel Enhancement-Mode MOSFET VDS 100V RDS ON 0.11Ω ID 17A TM T E F N GE TO-220AB 0.415 (10.54) MAX. 0.185 (4.70) 0.370 (9.40) 0.360 (9.14) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) DIA. t c u rod P New 0.055 (1.39) 0.045 (1.14) G 0.113 (2.87)


    Original
    IRF530N O-220AB IRF530N MOSFET IRF530n PDF

    4.5v to 100v input regulator

    Contextual Info: PD - 94962 IRF530NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original
    IRF530NPbF O-220 O-220AB 4.5v to 100v input regulator PDF

    IRF530N applications

    Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
    Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original
    IRF530NSPbF IRF530NLPbF EIA-418. IRF530N applications AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator PDF

    AN-994

    Abstract: IRF530N IRF530NL IRL3103L
    Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original
    IRF530NSPbF IRF530NLPbF EIA-418. AN-994 IRF530N IRF530NL IRL3103L PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier


    Original
    1351A IRF530N O-220 IRF1010 IRF530N MOSFET IRF530n PDF

    IRF530N

    Abstract: IRF530N applications IRF1010 irf1010 applications
    Contextual Info: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier


    Original
    IRF530N O-220 IRF1010 IRF530N IRF530N applications IRF1010 irf1010 applications PDF

    IRF530NS

    Abstract: IRF530N IRF530NL AN-994
    Contextual Info: PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.11Ω G ID = 17A S


    Original
    1352A IRF530NS/L IRF530NS) IRF530NL) IRF530NS IRF530N IRF530NL AN-994 PDF

    IRF530N

    Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier


    Original
    1351A IRF530N O-220 IRF530N PDF

    IRF530NS

    Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
    Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original
    91352B IRF530NS IRF530NL EIA-418. IRF530NS 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Contextual Info: IRF530N N-Channel Enhancement-Mode MOSFET VDS 100V RDS ON 0.11Ω ID 17A TM T E F N GE TO-220AB 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) G 0.145 (3.68) 0.135 (3.43) D 0.410 (10.41) 0.390 (9.91) G PIN D D 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) Dia.


    Original
    IRF530N O-220AB IRF530N MOSFET IRF530n PDF