IRF731 Search Results

CMD8

Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)

F7101

Abstract: IRF7101 IRF7311 MS-012AA
Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier

IRF7317

Abstract: MS-012AA
Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V

IRF7316

Abstract: tfr 586
Contextual Info: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier

1N MARKING

Contextual Info: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2

Contextual Info: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier

Irf7314

Contextual Info: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier

f7101

Abstract: IRF7316 91505B
Contextual Info: PD - 9.1505B IRF7316 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 95180 IRF7311PbF • Lead-Free www.irf.com 1 4/24/04 IRF7311PbF 2 www.irf.com IRF7311PbF www.irf.com 3 IRF7311PbF 4 www.irf.com IRF7311PbF www.irf.com 5 IRF7311PbF SO-8 Package Outline Dimensions are shown in milimeters inches D DIM B 5 A 6 8 7 6 5

74a diode

Contextual Info: IRF7313QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: IRF7313PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 0.029 Ω 22 Qg (typical) ID nC 6.5 (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

HEXFET Power MOSFET P-Channel

Abstract: IRF P CHANNEL MOSFET 10a HEXFET Power MOSFET HEXFET SO-8 IRF P CHANNEL MOSFET mosfet p-channel 10A irf
Contextual Info: PD - 96107 IRF7314QPbF HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature

Contextual Info: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier

IRF7319PBF

Abstract: irf MOSFET p-CH
Contextual Info: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description

Contextual Info: International IÖ R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power M OSFET Generation V Technology Ultra Low On-Reslstance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20V ^ D S o n = 0.029Î2 Description Fifth Generation HEXFETsfrom International Rectifier

IRF7316

Abstract: D 304 x
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1505 IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1

top datasheet download 1505a

Abstract: IRF7316
Contextual Info: PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -30V RDS on = 0.058Ω T op V iew Description

RF730

Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
Contextual Info: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:

Contextual Info: PD - 9.1568A International I"R Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation H E X F E T sfro m International Rectifier

F0041

Abstract: IRF7314
Contextual Info: International IGR Rectifier PD - 9.1436A IRF7314 PRELIMINARY HEXFET Power M O SFET • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V DSS = -20V ^DS on = 0.0580 Description Fifth Generation HEXFETsfrom international Rectifier

EIA-541

Abstract: IRF7101
Contextual Info: IRF7313PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: IRF7314QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

IRF730

Abstract: IRF731 IRF733 IRF732 K 3911 K 3911 mosfet
Contextual Info: HE 0 I MÖ5S4S2 000053t, □ | Data Sheet No. PD-9.308J INTERNATIONAL RE CT IFIE R INTERNATIONAL RECTIFIER IOR T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* IRF730 IRF731 IRF732 IRF733 HEXFET TRAIMSISTOR5 N-CHANNEL 400 Volt, 1.0 Ohm HEXFET TO-220AB Plastic Package

MOSFET IRF 380

Contextual Info: IRF7316PbF-1 VDS RDS on max (@VGS = -10V) -30 V 0.058 Ω 23 nC -4.9 A Qg (typical) ID (@TA = 25°C) HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques