IRF734 Search Results

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

IRF1010

Abstract: IRF734 SS452
Contextual Info: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner

Contextual Info: PD-95973 IRF734PbF • Lead-Free Document Number: 91049 12/20/04 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049

IRF7342

Contextual Info: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V

Contextual Info: PD - 96109A IRF7342QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V

Contextual Info: PD - 96088 IRF7343IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description

F8707G

Abstract: f8707 IRF8707G
Contextual Info: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package

IRF7342D2

Contextual Info: PD- 94101A IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D D VDSS = -55V

10-150TC

Contextual Info: PD- 95299 IRF7342D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode l 1 8 K A 2 7 K S

IRF7342PbF

Contextual Info: PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2

IRF P CHANNEL MOSFET

Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
Contextual Info: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET

51A SO8

Contextual Info: IRF7341QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: IRF7342QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: PD - 96108A IRF7341QPbF HEXFET Power MOSFET Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿ Lead-Free VDSS RDS on max

PN channel MOSFET 10A

Abstract: P channel MOSFET 10A
Contextual Info: PD - 96109 IRF7342QPbF O O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2

Contextual Info: IRF7342QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V RDS on = 0.105Ω

IRF734

Contextual Info: IRF734, SiHF734 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 45 Qgs (nC) 6.6 Qgd (nC) 24 Configuration • Repetitive Avalanche Rated 1.2 • Simple Drive Requirements • Lead (Pb)-free

IRF7343QPBF

Contextual Info: PD - 96110A IRF7343QPBF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2

95087

Contextual Info: PD-95087 IRF7341IPbF l l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V

IRF7343IPBF

Abstract: NCH 60V 20A mosfet p-channel 12v
Contextual Info: PD - 96088 IRF7343IPbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier

IRF7341Q

Abstract: 7-D-13 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94391B IRF7341Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • • • • • • VDSS RDS(on) max ID 55V 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A Advanced Process Technology

IRF7343

Abstract: IR*343
Contextual Info: PD - 9.1709 IRF7343 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 P -C H A N N E L M O S FE T

IRF7343

Abstract: IR*343
Contextual Info: PD -91709 IRF7343 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T

Contextual Info: PD - 96110A IRF7343QPBF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2