IRF742 Search Results

Contextual Info: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package

Contextual Info: PD - 95633A IRF7420PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V -11.5A 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -9.8A -8.1A Description

IRF7424PbF

Abstract: IRF7101 6071A
Contextual Info: IRF7424PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

IRF7422D2

Abstract: MS-012AA
Contextual Info: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D

Contextual Info: PD- 96062 IRF7425PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from

Contextual Info: PD - 95310 IRF7422D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7

Laptop battery charge control circuit

Abstract: 12v charge control 12V to 5V buck boost converter lcds Laptop battery circuit hard disk ir*526 IRF7321D2 buck converter irf7326d2
Contextual Info: JULY 1998  Target Applications FETKY Standard Buck Converter Buck/Boost Converter ♠ ♠ LOAD LOAD CONTROL CONTROL • Example: 5V input to 3.3V output application for hard disc drive • Target notebook PCs, hard disk drives, LCDs and printers • IRF7321D2, IRF7322D1, IRF7324D1, IRF7326D2, IRF7422D2

10.00 ju

Abstract: IRF7422D2
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8

IRF7424

Contextual Info: PD- 94024A IRF7424 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

IRF74

Abstract: IRF742 IRF743
Contextual Info: [F@Mm°[M © IFHF IRF742.743 8 AMPERES 400, 350 VOLTS R|DS ON = 0.80 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

smd CODE 3Gs

Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Contextual Info: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =

Contextual Info: IRF7425PbF VDS -20 RDS on max HEXFET Power MOSFET V (@VGS = -4.5V) 1 8 S 2 7 D S 3 6 D G 4 5 D mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package

Contextual Info: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from

IRF7421

Contextual Info: P D - 9.1411B International IO R Rectifier IRF7421D1 FETKY M O SFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 Technology SO-8 Footprint Voss = 30V ^DS on = 0.035Q Schottky Vf = 0.42V

IRF7422D2

Contextual Info: PD- 91412J IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A

EIA-541

Abstract: F7101 IRF7101 IRF7420 Ultra Low rds
Contextual Info: PD - 94278A IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

Contextual Info: IRF742FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)

IRF7101

Abstract: IRF7421D1 diode schottky 117c
Contextual Info: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

IIRF743R

Abstract: IRF740R IRF741R IRF742R IRF743R
Contextual Info: Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R File Number 2033 Avalanche Energy Rated N-Channel Power M OSFETs T E R M IN A L D IA G R A M 10A and 8A, 400V-300V rDs on = 0.550 and 0.80 D Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

IRF74Q

Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
Contextual Info: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI

MOSFET IRF7425

Abstract: IRF7425 MS-012AA
Contextual Info: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from

Contextual Info: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D