IRF7509 Search Results

Contextual Info: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel

EE 19B transformer

Abstract: IRF7509 Dual N P-Channel irf MOSFET p-CH
Contextual Info: PD - 9.1270H IRF7509 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching Description l l S1 G1 S2 G2 P -C H A N NE L M O S F E T

IRF7509

Abstract: IRF7509P 91270j IRF7509N
Contextual Info: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T

MOSFET SMD N-Channel 30V 0.85A

Abstract: MOSFET SMD N-Channel 30V 100A P-CHANNEL MOSFET SMD MARKING CODE YA IRF7509 smd MARKING GG ld085
Contextual Info: International PD 9.1270C S Rectifier IRF7509 PRELMINARY HEXFET Power M O S FE T • Generation V Technology • Ultra Low On-Resistance • Dual N-Channe’l MOSFET • Very Small SOIC Package • Low Profile <1,1 mm • Available in Tape & Reel • Fast Switching

IRF7509

Abstract: mosfet irf 150 IRF MOSFET driver 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 IRF P CHANNEL MOSFET 10a IRF 315
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 91270E IRF7509 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching

Contextual Info: IRF7509PbF-1 HEXFET Power MOSFET N-CH 30 VDS RDS on max (@VGS = 10V) Q g (typical) ID (@TA = 25°C) P-CH -30 V S1 N-CHANNEL MOSFET 1 8 D1 0.11 0.2 Ω G1 2 7.8 7.5 nC S2 3 6 D2 G2 4 5 D2 2.7 -2.0 A 7 D1 P-CHANNEL MOSFET Micro8 Top View Features Industry-standard pinout Micro-8 Package

Contextual Info: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET

Contextual Info: IRF7509 Transistors Complementary Pair of MOSFETs V BR DSS (V)30 V(BR)GSS (V) I(D) Max. (A)1.3 I(DM) Max. (A) Pulsed I(D)1.1 @Temp (øC)70 IDM Max (@25øC Amb)10 Absolute Max. Power Diss. (W)390m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ

IRF7509PBF

Abstract: IRF7509 IRF P CHANNEL MOSFET IRF7501
Contextual Info: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET

Contextual Info: PD - 9.1270H International Rectifier I"R IRF7509 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

IRF7509

Contextual Info: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T

c227 diode

Abstract: c225 diode LP C225
Contextual Info: PD - 9.1270H International IGR Rectifier IRF7509 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape and Reel Fast Switching

LTM2883Y-5S

Abstract: THERMISTORS - SCK 055 LTM2883Y-3S ETH1-230L LTM2883Y-3I LTM2883Y-5I LTM2883-5I LTM2883-5S LTM2883-3S NTC SCK 055
Contextual Info: LTM2883 SPI/Digital or I2C µModule Isolator with Adjustable ±12.5V and 5V Regulated Power Description Features UL Rated 6-Channel Logic Isolator: 2500VRMS UL Recognized File #E151738 n Isolated Adjustable DC Power: 3V to 5V at Up to 30mA ±12.5V at Up to 20mA

IRF9952

Contextual Info: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET

RC4458

Abstract: 4558 PIN RC4558 Application Note magnetometer digital Wheatstone Bridge amplifier Tilt Sensors degree 3 axis HMC1052L HMC1053 4558 opamp d 4558
Contextual Info: 1, 2 and 3 Axis Magnetic Sensors HMC1051/HMC1052/HMC1053 The Honeywell HMC1051, HMC1052 and HMC1053 are magnetoresistive sensors designed for low field magnetic sensing. Various packaging options have been created from the basic HMC1052 sensor chip to create 1, 2 and 3-axis magneto-resistive

RC4458

Abstract: HMC1051 4558 opamp AN209 honeywell MOSFET 1052 IRF7507 4558 sip VEHICLE DETECTION Wheatstone Resistive Bridge amplifier HMC1051Z
Contextual Info: HMC1051 / HMC1052 SENSOR PRODUCTS 1 AND 2-AXIS MAGNETIC SENSORS Features • · · · · · · Small 8-Pin SIP or 10-Pin MSOP Packages Two AMR Bridges in One Package Wide Field Range of +/- 6 Gauss 1.0 mV/V/gauss Sensitivity High Accuracy Compassing Error <0.01°

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

ultrasonic microcontroller based distance meter

Abstract: schematic inductive proximity sensor vehicle loop detector how to interface inductive sensor to pic pic16xx vehicle Speed detection sensor gmr sensor vehicle detection traffic detection sensor schematic inductive sensor ultrasonic proximity sensor interfacing with microcontroller
Contextual Info: Application Note – AN218 Vehicle Detection Using AMR Sensors ABSTRACT The ever increasing need for automated vehicle sensing has brought about interest in Honeywell’s Anisotropic Magneto-Resistive AMR sensors as an upgrade from older and simpler vehicle detection systems. With the

compass ic

Abstract: "Magnetic Sensor" 230 kv mxd2020el MCP6024S HMC1051 lm1117 3.3V century fasteners MCP6022 AN996
Contextual Info: AN996 Designing a Digital Compass Using the PIC18F2520 Author: Chris Valenti Microchip Technology Inc. INTRODUCTION Digital compasses have become popular in the past few years due to the advancement of magnetic sensors and feature-rich microcontrollers. Compass applications

BJT 2N2222 datasheet

Abstract: bjt 2n2222 transistor BJT 2N2222 BJT 2N2222 beta 2N2222 bjt circuits using BJT 2N2222 hmc1022 BJT 2N2222 datasheet beta circuits using BJT 2N2222 in transistor IRF7105N
Contextual Info: AN213 SENSOR PRODUCTS APPLICATION NOTE SET/RESET FUNCTION FOR MAGNETIC SENSORS ABSTRACT Honeywell’s Anisotropic Magneto-Resistive AMR sensors are fabricated with Permalloy (NiFe) thin films that create changes in resistivity with respect to external magnetic fields. These film materials are

LTM2883Y-3S

Abstract: marking code s6 LTM2883Y-5S ltc4266 application LTC2641
Contextual Info: LTM2883 SPI/Digital or I2C µModule Isolator with Adjustable ±12.5V and 5V Regulated Power Description Features UL Rated 6-Channel Logic Isolator: 2500VRMS UL Recognized File #E151738 n Isolated Adjustable DC Power: 3V to 5V at Up to 30mA ±12.5V at Up to 20mA

Contextual Info: LTM2883 SPI/Digital or I2C µModule Isolator with Adjustable ±12.5V and 5V Regulated Power Description Features 2500VRMS for One Minute per UL1577 UL Recognized File #E151738 n Isolated Adjustable DC Power: 3V to 5V at Up to 30mA ±12.5V at Up to 20mA n No External Components Required

IRF7309

Abstract: IRF7319 IRF7509 IRF9952
Contextual Info: PD - 91561B IRF9952 l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

RC4458

Abstract: 4558 opamp rc4458 op-amp VEHICLE DETECTION AMR 4558 mosfet wheatstone bridge with thermistor HMC1051Z an-209 honeywell sip8 opamp rc4558 sip8
Contextual Info: HMC1051Z / HMC1052 SENSOR PRODUCTS 1 AND 2-AXIS MAGNETIC SENSORS Features • • • • • • • Small 8-Pin SIP or 10-Pin MSOP Packages Two AMR Bridges in One Package Wide Field Range of ± 6 Gauss 1.0 mV/V/gauss Sensitivity High Accuracy Compassing Error <0.01°