IRF9140 Search Results

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

1RF9540

Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY

IRF9140

Abstract: TA17521 TB334
Contextual Info: IRF9140 Data Sheet February 1999 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

Contextual Info: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF9140

Contextual Info: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

diode 6.2

Contextual Info: lili SEM E IRF9140 LAB MECHANICAL DATA D im e nsio ns in mm inches P-CHANNEL POWER MOSFET -1 0 0 V V DSS -1 8 A I D(cont) 0.2Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE 20.32 (0.800) 18.80 (0.740) dia. • SIMPLE DRIVE REQUIREMENTS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

ciss 200v

Abstract: IRFE310
Contextual Info: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W

irf9140

Contextual Info: IRF9140, IRF9141, IRF9142, IRF9143 HARRIS S E M I C O N D U C T O R •19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -1 9A and -1 5A, -80V and -1 00V • High Input Im pedance These are P-Channel enhancement mode silicon gate

1RF9140

Abstract: F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET
Contextual Info: H A R R I S IRF9140, IRF9141 IRF9142, IRF9143 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 994 Package Features T O -2 0 4 A A BOTTOM VIEW • -19 A and -15A , -80 V and -100V • rQS ON = 0 .2 0 0 and 0.30H DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated

IRF9140

Contextual Info: PD - 93976A IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9140 BVDSS -100V RDS(on) 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF9140

Abstract: SHD219409 SHD2199
Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

IRF9140SM

Contextual Info: Illl iF t i mi IRF9140SM SEME LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 n a ^D(cont) 3.0 3.5 -100V -14A 0.020Û VDss 0.25 M R DS(on) <£> FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE n • SM ALL FOOTPRINT - EFFICIENT USE OF

IRF9140

Abstract: P channel Mosfets P-CHANNEL SHD218509B
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, P Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style -100 -18 -11 125 0.2 @ -11 1 IRF9140

Contextual Info: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

IRF9140

Abstract: SHD218409 SHD218409A SHD218409B
Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.2 Ohm, -18A MOSFET • Electrically Isolated Hermetically Sealed • Low RDS on • Equivalent to IRF9140 Series

l 9143

Abstract: irf9140
Contextual Info: IRF9140, IRF9141, IRF9142, IRF9143 S E M I C O N D U C T O R -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IC 4051 data sheet

Abstract: IRF9140 SHD239409
Contextual Info: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series MAXIMUM RATINGS

IRF9

Contextual Info: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series MAXIMUM RATINGS

SHD218409A

Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

f9140

Abstract: IRF9140 IRF9141 IRF9142 IRF9143
Contextual Info: Rugged Power M O IRF9140, IRF9141 IRF9142, IRF9143 File Number 2278 Avalanche-Energy-Rated P-Channel Power MOSFETs -19 A and -15 A, -60 V and -100 V fDSion» = 0.20 O and 0.30 fì TERMINAL DIAGRAM

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.